Near-blue photoluminescence of Zn-doped GaS single crystals

Aono, Tomoyoshi; Kase, Kunio; Kinoshita, Akira

doi:10.1063/1.354632

Cited by 55 publications

(33 citation statements)

References 3 publications

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“…Bulk GaSe crystal was reported to be a direct-gap semiconductor with a band gap of 2.0 eV, while bulk GaS was found to be an indirect-gap semiconductor with a band gap of 2.4 eV [12,13]. In recent years large area ultrathin layers of GaS and GaSe crystals were successfully synthesized on SiO 2 /Si substrates by using micromechanical cleavage technique [14][15][16][17][18]. Chen et al studied theoretically the electronic and magnetic properties of substitutionally doped monolayer GaS and found that the N atom is the most promising candidate for p-type doping among nonmetal and transition-metal dopants.…”

Section: Introductionmentioning

confidence: 99%

Mechanical properties of monolayer GaS and GaSe crystals

et al. 2016

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The mechanical properties of monolayer GaS and GaSe crystals are investigated in terms of their elastic constants: in-plane stiffness (C), Poisson ratio (ν), and ultimate strength (σ U ) by means of first-principles calculations. The calculated elastic constants are compared with those of graphene and monolayer MoS 2 . Our results indicate that monolayer GaS is a stiffer material than monolayer GaSe crystals due to the more ionic character of the Ga-S bonds than the Ga-Se bonds. Although their Poisson ratio values are very close to each other, 0.26 and 0.25 for GaS and GaSe, respectively, monolayer GaS is a stronger material than monolayer GaSe due to its slightly higher σ U value. However, GaS and GaSe crystals are found to be more ductile and flexible materials than graphene and MoS 2 . We have also analyzed the band-gap response of GaS and GaSe monolayers to biaxial tensile strain and predicted a semiconductor-metal crossover after 17% and 14% applied strain, respectively, for monolayer GaS and GaSe. In addition, we investigated how the mechanical properties are affected by charging. We found that the flexibility of single layer GaS and GaSe displays a sharp increase under 0.1e/cell charging due to the repulsive interactions between extra charges located on chalcogen atoms. These charging-controllable mechanical properties of single layers of GaS and GaSe can be of potential use for electromechanical applications.

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Section: Introductionmentioning

confidence: 99%

Mechanical properties of monolayer GaS and GaSe crystals

et al. 2016

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“…Crystals suitable for measurements were obtained by easy cleavage of an ingot along the layers, which are perpendicular to the c-axis. Typical sample dimensions were 5.5 × 4.2 × 1.5 mm 3 . The room-temperature conductivity, mobility and electron concentration were 9 × 10 −10 (Ω cm) −1 , 48 cm 2 V −1 s −1 and 3 × 10 9 cm −3 , respectively.…”

Section: Methodsmentioning

confidence: 99%

“…By varying the composition of the GaS-GaSe system, the energy gap of the complete series covers a wide range of the visible spectrum. These crystals are promising materials for the production of light emitting and optical switching devices [3,4] and photodetectors [5]. One of the determining factors in the eventual device performance of semiconductors is the presence of impurity and defect centers in the crystal.…”

Section: Introductionmentioning

confidence: 99%

Thermally stimulated currents in layered Ga4SeS3 semiconductor

Aytekin

Yuksek

Göktepe

et al. 2004

phys. stat. sol. (a)

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Thermally stimulated current (TSC) measurements are carried out on nominally undoped Ga4SeS3 layered semiconductor samples with the current flowing along the c-axis in the temperature range of 10 to 150 K. The results are analyzed according to various methods, such as curve fitting, initial rise and Chcn's methods, which seem to be in good agreement with each other. Experimental evidence is found for the presence of three trapping centers in Ga4SeS3 with activation energies of 70, 210 and 357 meV. The calculation yielded 7.9 × 10-21,7.0 × 10 -19 and 1.5 × 10-13 cm2 for the capture cross section, and 1.6 × 1010, 6.5 × 1010 and 1.2 × 1011 cm-3 for the concentration of the traps studied. © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinlteim

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“…The indirect band gap of both GaSe and GaS is reflected in the energy band diagram of Ga 2 SeS crystal with energy gap of 2.33 and 2.27 eV at 10 and 300 K, respectively [1,2]. Ga 2 SeS may be a promising semiconductor for applications in optoelectronic devices such as near-blue emitting and detecting devices [3][4][5]. The anisotropic nature of the crystal may also allow the use of Ga 2 SeS in polarization selective waveguide devices such as polarization splitters, modulators, etc.…”

Section: Introductionmentioning

confidence: 99%

Trap levels in layered semiconductor Ga2SeS

Aydınlı

Gasanly

Aytekin

2004

Solid State Communications

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Trap levels in nominally undoped Ga 2 SeS layered crystals have been characterized by thermally stimulated current (TSC) measurements. During the measurements, current was allowed to flow along the c-axis of the crystals in the temperature range of 10-300 K. Two distinct TSC peaks were observed in the spectra, deconvolution of which yielded three peaks. The results are analyzed by curve fitting, peak shape and initial rise methods. They all seem to be in good agreement with each other. The activation energies of three trapping centers in Ga 2 SeS are found to be 72, 100 and 150 meV. The capture cross section of these traps are 6.7!10 K23 , 1.8!10 K23 and 2.8!10 K22 cm 2 with concentrations of 1.3!10 12 , 5.4!10 12 and 4.2!10 12 cm K3 , respectively. q

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Near-blue photoluminescence of Zn-doped GaS single crystals

Cited by 55 publications

References 3 publications

Mechanical properties of monolayer GaS and GaSe crystals

Mechanical properties of monolayer GaS and GaSe crystals

Thermally stimulated currents in layered Ga4SeS3 semiconductor

Trap levels in layered semiconductor Ga2SeS

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