Near band‐gap photoluminescence of InN due to Mahan excitons

Feneberg, Martin; Däubler, Jürgen; Thonke, Klaus; Sauer, R.; Schley, P.; Goldhahn, R.

doi:10.1002/pssc.200880920

Cited by 4 publications

(3 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In Equation ( 2), ω is the photon energy, E g represents the band gap value, E A is the energy of acceptor ionization energy, E F represents the quasi-Fermi energy, and k b and T represent the Boltzman coefficient and electron temperature, respectively. During the fitting process, the Gaussian band was added to explain the enhanced effect of the Fermi edge singularity on the optical matrix of the Mahan excitons [34]. The fitting line shape is plotted in Figure 4a, which is in agreement with the experimental spectra, and a summary of the fitted results is provided in Table 2.…”

Section: Resultssupporting

confidence: 60%

Correlation of Morphology Evolution with Carrier Dynamics in InN Films Heteroepitaxially Grown by MOMBE

et al. 2021

View full text Add to dashboard Cite

In this study, we report the catalyst-free growth of n-type wurtzite InN, along with its optical properties and carrier dynamics of different surface dimensionalities. The self-catalyzed epitaxial growth of InN nanorods grown by metal–organic molecular-beam epitaxy on GaN/Al2O3(0001) substrates has been demonstrated. The substrate temperature is dominant in controlling the growth of nanorods. A dramatic morphological change from 2D-like to 1D nanorods occurs with decreasing growth temperature. The InN nanorods have a low dislocation density and good crystalline quality, compared with InN films. In terms of optical properties, the nanorod structure exhibits strong recombination of Mahan excitons in luminescence, and an obvious spatial correlation effect in phonon dispersion. The downward band structure at the nanorod surface leads to the photon energy-dependent lifetime being upshifted to the high-energy side.

show abstract

Section: Resultssupporting

confidence: 60%

Correlation of Morphology Evolution with Carrier Dynamics in InN Films Heteroepitaxially Grown by MOMBE

et al. 2021

View full text Add to dashboard Cite

show abstract

“…The spectra exhibit pronounced differences: While the PL spectrum of the InN/AlN/Si(111) shows a single peak at 0.68 eV with a line shape typical for degenerated semiconductors, the one of the InN/GaN(0001) sample exhibits a double peak structure (peaks at 0.677 and 0.695 eV). The high energy peak at 0.695 eV originates from band-to-band transitions (Mahan excitons) caused by the Burstein-Moss shift [22][23][24], which are only visible in high-quality layers [25]. The lower energy peaks of both samples (0.68 and 0.677 eV) can be assigned to point defect bands near the conduction band.…”

Section: A Structural Qualitymentioning

confidence: 97%

Intrinsic electronic properties of high-quality wurtzite InN

et al. 2016

View full text Add to dashboard Cite

Recent reports suggested that InN is a highly unusual III-V semiconductor, whose behavior fundamentally differs from that of others. We therefore analyzed its intrinsic electronic properties on the highest available quality InN layers, demonstrating the absence of electron accumulation at the (1010) cleavage surface and in the bulk. The bulk electron density is governed solely by dopants. Hence, we conclude that InN acts similarly to the other III-V semiconductors and previously reported intriguing effects are related to low crystallinity, surface decomposition, nonstoichiometry, and/or In adlayers.

show abstract

“…In Equation ( 1), hω is the photon energy, E g is the band gap value, E A represents the energy of acceptor state above the valance band, E F is the quasi-Fermi energy and k b and T are the Boltzman coefficient and the electron temperature, respectively. The adding of the Gaussian band interprets the enhancement of the optical matrix of the Mahan excitons [14].…”

Section: Resultsmentioning

confidence: 99%

Energy-Dependent Time-Resolved Photoluminescence of Self-Catalyzed InN Nanocolumns

et al. 2021

View full text Add to dashboard Cite

In this study, we report the optical properties and carrier dynamics of different surface dimensionality n-type wurtzite InN with various carrier concentrations using photoluminescence (PL) and an energy-dependent, time-resolved photoluminescence (ED-TRPL) analysis. Experimental results indicated that the InN morphology can be controlled by the growth temperature, from one-dimensional (1D) nanorods to two-dimensional (2D) films. Moreover, donor-like nitrogen vacancy (VN) is responsible for the increase in carrier concentration due to the lowest formation energies in the n-type InN samples. The PL results also reveal that the energies of emission peaks are higher in the InN samples with 2D features than that with 1D features. These anomalous transitions are explained as the recombination of Mahan excitons and localized holes, and further proved by a theoretical model, activation energy and photon energy-dependent lifetime analysis.

show abstract

Near band‐gap photoluminescence of InN due to Mahan excitons

Cited by 4 publications

References 11 publications

Correlation of Morphology Evolution with Carrier Dynamics in InN Films Heteroepitaxially Grown by MOMBE

Correlation of Morphology Evolution with Carrier Dynamics in InN Films Heteroepitaxially Grown by MOMBE

Intrinsic electronic properties of high-quality wurtzite InN

Energy-Dependent Time-Resolved Photoluminescence of Self-Catalyzed InN Nanocolumns

Contact Info

Product

Resources

About