Near‐ and far‐field optical characterization of InGaN photonic crystal light emitting diodes

Liuolia, Vytautas; Marcinkevičius, Saulius; Wang, Qin; Andersson, Jan Y.; Kim, Sang-Mook; Baek, Jong Hyeob

doi:10.1002/pssc.201100571

Cited by 4 publications

(4 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The SNOM data show that the localization centres and the spacing between them are much smaller than 100 nm; besides, the centres have different potential depths. This is in stark contrast with AlGaN and InGaN, which typically contain larger localization islands with dimensions of hundreds nm to several µm [13,14,15].…”

Section: Resultsmentioning

confidence: 84%

Carrier dynamics and localization in AlInN/GaN heterostructures

Marcinkevičius

Liuolia

Billingsley

et al. 2013

Phys. Status Solidi C

Self Cite

View full text Add to dashboard Cite

Photoexcited carrier dynamics and localization potentials in Al0.86In0.14N/GaN heterostructure have been examined by time‐resolved photoluminescence (PL), transient photoreflectance and scanning near‐field optical spectroscopy. The large GaN and AlInN PL intensity difference, and the short AlInN PL decay and GaN PL rise times indicate efficient photoexcited carrier transfer from AlInN to GaN via sub‐band edge states. Near‐field PL scans and photoreflectance data show that the diameter of the localization sites and the distance between them are well below 100 nm. Majority of these states is assigned to In clusters, in which the valence band has a higher energy than the valence band in a uniform AlInN alloy. It is likely that the carrier transport through the sub‐band edge states proceeds via high conductivity channels involving extended defects. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

Section: Resultsmentioning

confidence: 84%

Carrier dynamics and localization in AlInN/GaN heterostructures

Marcinkevičius

Liuolia

Billingsley

et al. 2013

Phys. Status Solidi C

Self Cite

View full text Add to dashboard Cite

show abstract

“…The study also highlighted a strong dependency of the optical enhancement factor on the photonic crystal lattice constant and hole size. Similarly, V. Liuolia et al [44] employed both SNOM and time-resolved PL to investigate light extraction from InGaN photonic crystal LEDs. Their study reported complex near-field intensity patterns that did not correspond directly to the physical structure of the photonic crystal, suggesting that the photonic crystal not only improved the light extraction but also rendered the LED emission more homogeneous.…”

Section: Photonic Crystalmentioning

confidence: 99%

mentioning

confidence: 99%

Optical Characterization of InGaN Quantum Structures at the Nanoscale

Fu,

Choi

2024

Adv Quantum Tech

View full text Add to dashboard Cite

This review paper presents an overview of the optical characterization techniques for Indium Gallium Nitride (InGaN) quantum well (QW) structures at a nanoscale. The two major techniques are reviewed—Electron Microscopy‐Cathodoluminescence (EM‐CL) and Scanning Near‐field Optical Microscopy (SNOM). It elucidates the critical role these methodologies play in revealing the complex properties of InGaN QWs, including their structural characteristics, optical properties, carrier dynamics, and the effects of defects and doping. The review highlights key findings from a variety of studies, demonstrating how EM‐CL and SNOM have contributed to the understanding of these micro‐/nano‐ structures and their potential applications in high‐efficiency optoelectronic devices.

show abstract

“…Optical investigation of PhC LED comprises of light-current measurements as well as near-and farfield measurements. Near-field distribution was studied in [3,4], where plane distribution of the emitted light was primarily investigated. However, light-current characteristics can be also determined from approach based on processing of Near Surface Light Emission Images (NSLEI).…”

Section: Introductionmentioning

confidence: 99%

Optical properties of LEDs with patterned 1D photonic crystal

et al. 2015

View full text Add to dashboard Cite

In this paper we focus on the application of the one-dimensional photonic crystal (1D PhC) structures on the top of Al 0.295 Ga 0.705 As/GaAs multi-quantum well light emitting diode (MQW LED). 1D PhC structures with periods of 600 nm, 700 nm, 800 nm, and 900 nm were fabricated by the E-Beam Direct Write (EBDW) Lithography. Effect of 1D PhC period on the light extraction enhancement was studied. 1D PhC LED radiation profiles were obtained from Near Surface Light Emission Images (NSLEI). Measurements showed the strongest light extraction enhancement using 800 nm period of PhC. Investigation of PhC LED radiation profiles showed strong light decoupling when light reaches PhC structure. Achieved LEE was from 22.6% for 600 nm PhC LED to 47.0% for 800 nm PhC LED. LED with PhC structure at its surface was simulated by FDTD simulation method under excitation of appropriate launch field.

show abstract

Near‐ and far‐field optical characterization of InGaN photonic crystal light emitting diodes

Cited by 4 publications

References 0 publications

Carrier dynamics and localization in AlInN/GaN heterostructures

Carrier dynamics and localization in AlInN/GaN heterostructures

Optical Characterization of InGaN Quantum Structures at the Nanoscale

Optical properties of LEDs with patterned 1D photonic crystal

Contact Info

Product

Resources

About