NEA peak of the differently terminated and oriented diamond surfaces

Diederich, L.; Aebi, Philipp; Küttel, O. M.; Schlapbach, L.

doi:10.1016/s0039-6028(99)00210-1

Cited by 49 publications

(46 citation statements)

References 38 publications

(47 reference statements)

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“…Boron-doped diamond (100) surface scales) and it is at the position of the CBM located above E vac . In the case of PEA the electrons are The B-doped, type IIb diamond (100) surface cleaned by a hydrogen plasma [20,29] is stable in emitted into vacuum down to the vacuum level ( located above the CBM ). He I normal emission air and it presents no surface contamination as shown by the XP normal emission overview spectra are presented in Fig.…”

Section: Nitrogen-doped Synthetic Diamond (100) Surfacementioning

confidence: 99%

“…3. Atomic force microscope images show a very relative position of the CBM with respect to E F is chosen by the cutoff of the NEA peak with extrapsmooth surface with a mean roughness lower than 5 Å (RMS) [29] while the LEED pattern shows a olation to zero intensity. The spectra cutoff of the 400°C annealed surface is situated at 3.1 eV.…”

Section: Nitrogen-doped Synthetic Diamond (100) Surfacementioning

confidence: 99%

“…The N-doped, type Ib diamond is a potential tion [29]. After hydrogen plasma cleaning the samples were mounted on a heatable (up to material for cold-cathode field emitters characterized by high field emission currents at very low 1200°C ) sample holder and transferred at ambient conditions to a VG ESCALAB Mk II spectrometer power [8,11] (100) the N-doped diamond (100) surface is insulating at room temperature, the charging effects were surface would result in a work function of −0.5 eV, being a very questionable value.…”

Section: Introductionmentioning

confidence: 99%

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Photoelectron emission from nitrogen- and boron-doped diamond (100) surfaces

et al. 1998

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The nitrogen-doped (N-doped ), type Ib, synthetic diamond (100) surface was investigated by means of X-ray photoelectron spectroscopy ( XPS) and ultraviolet photoelectron spectroscopy ( UPS ). Photoelectron emission data from the boron-doped (B-doped ) and the N-doped diamond (100) surfaces were compared and permitted the energy band diagrams for these differently terminated surfaces to be drawn. We observed emission from energy levels below the conduction band minimum up to the vacuum level and therefore succeed in evaluating the negative electron affinity (NEA) of the hydrogen-terminated diamond surfaces. Both the hydrogen-terminated N-and B-doped diamond (100) surfaces show NEA values of at least −0.2 and −1.0 eV, respectively, while the hydrogen-free surfaces show positive electron affinity. In contrast to the hydrogen-terminated B-doped (100) surface, UPS measurements on the hydrogen-terminated N-doped (100) surface do not reveal a high intensity NEA peak owing to the strong upward band bending. The high intensity NEA peak of B-doped diamond seems to be due to the downward band bending together with the reduced work function because of hydrogen termination. The work function increases for subsequent hydrogen desorption at higher annealing temperatures with associated loss of NEA. For the N-doped diamond (100) surface the work function behaves similarly but the observation of a NEA peak is absent because of the surface barrier formed by the upward band bending.

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Section: Nitrogen-doped Synthetic Diamond (100) Surfacementioning

confidence: 99%

Section: Nitrogen-doped Synthetic Diamond (100) Surfacementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Photoelectron emission from nitrogen- and boron-doped diamond (100) surfaces

et al. 1998

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“…Recently high quality hydrogenated diamond surfaces have been proposed for use as cathode materials where their negative electron (NEA) affinity makes them a highly effective and robust material [9][10][11]. Previous ab initio theoretical studies have elucidated the NEA mechanism as due to the strong bonding of hydrogen to the surface C=C bonds on the reconstructed diamond surface [12,13].…”

Section: Introductionmentioning

confidence: 99%

Atomistic Frictional Properties of the C(100)2x1-H Surface

Jones

Tang

Hsia

et al. 2013

Advances in Tribology

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Density functional theory-(DFT-) based ab initio calculations were used to investigate the surface-to-surface interaction and frictional behavior of two hydrogenated C(100) dimer surfaces. A monolayer of hydrogen atoms was applied to the fully relaxed C(100)2x1 surface having rows of C=C dimers with a bond length of 1.39Å. The obtained C(100)2x1-H surfaces (C-H bond length 1.15Å) were placed in a large vacuum space and translated toward each other. A cohesive state at a surface separation of 4.32Å that is stabilized by approximately 0.42 eV was observed. An increase in the charge separation in the surface dimer was calculated at this separation having a 0.04 e transfer from the hydrogen atom to the carbon atom. The Mayer bond orders were calculated for the C-C and C-H bonds and were found to be 0.962 and 0.947, respectively. C-H bonds did not change substantially from the fully separated state. A significant decrease in the electron density difference between the hydrogen atoms on opposite surfaces was seen and assigned to the effects of Pauli repulsion. The surfaces were translated relative to each other in the (100) plane, and the friction force was obtained as a function of slab spacing, which yielded a 0.157 coefficient of friction.

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“…Conduction models in polycrystalline materials, 5 nanostructured materials, 6 photoemission from negative-electronaffinity materials, 7 and gas sensing via chemoresistive materials 8 depend on such atomistic details. Double Schottky barriers include even more complexities, and there are several key questions that remain.…”

Section: Introductionmentioning

confidence: 99%

Electrical and spectroscopic analysis in nanostructured SnO2: “Long-term” resistance drift is due to in-diffusion

Malagù

Giberti

Morandi

et al. 2011

Journal of Applied Physics

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A model for conductance in n-type non-degenerate semiconductors is proposed and applied to polycrystalline SnO 2 used as a gas sensor. Particular attention is devoted to the fundamental mechanism of Schottky barrier formation due to surface states in nanostructured grains. Electrical and absorption infra-red spectroscopic analysis constitutes strong evidence for oxygen diffusion into the tin oxide grains. The model is then extended to include oxygen in-and out-diffusion. Thus, it is possible to explain the "long-term" resistance drift in oxygen for fully depleted grained samples in terms of tunneling through the double barrier.

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NEA peak of the differently terminated and oriented diamond surfaces

Cited by 49 publications

References 38 publications

Photoelectron emission from nitrogen- and boron-doped diamond (100) surfaces

Photoelectron emission from nitrogen- and boron-doped diamond (100) surfaces

Atomistic Frictional Properties of the C(100)2x1-H Surface

Electrical and spectroscopic analysis in nanostructured SnO2: “Long-term” resistance drift is due to in-diffusion

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