Nd:GdVO4 as a three-level laser at 879 nm

We report a diode-pumped Nd:YAG laser emitting at 899 nm based on the 4 F 3/2 -4 I 9/2 transition. A power of 1.04 W at 899 nm has been achieved in continuous-wave operation with a fiber-coupled laser diode emitting 19.2 W at 809 nm. Furthermore, intracavity second-harmonic generation in continuouswave mode has also been demonstrated with a power of 284 mW at 449.5 nm by using a BiB 3 O 6 (BiBO) nonlinear crystal. The fluctuation of the blue output power was better than 2.8%. The beam quality M 2 value is 1.3.

Section: Introductionmentioning

confidence: 98%

Diode-pumped Nd:YAG/BiB₃O₆deep-blue laser at 449.5 nm

Zhang

Chen

et al. 2010

“…A more efficient pumping method was presented and researched [10][11][12][13][14][15], which was to pump the Nd 3+ ions directly into the 4 F 3/2 upper lasing level, based on the fact that increasing the quantum defect ratio, η qd = λ p /λ em , between the ) is for the frequency doubled 458 nm laser. The distances of S1 to mirror M1, of S1 to mirror M2, of M2 to M3, and of M3 to M4 were 55, 220, 250, and 50 mm, respectively pump wavelength λ p and the laser wavelength λ em , improves the laser parameters such as the threshold and slope efficiency and reduces the amount of heat generated by the non-radiative processes.…”

Section: Introductionmentioning

confidence: 99%

Quasi-three-level Nd:LuVO₄laser under diode pumping directly into the emitting level

Xia

Zhang

2010

We describe the output performances of the 916 nm 4F3/2 → 4I9/2 transition in Nd:LuVO4 under in‐band pumping with diode laser at the 880 nm wavelength, directly into the 4F3/2 emitting level. An end‐pumped Nd:LuVO4 crystal yielded 11.7 W of continuous‐wave output power for 23.5 W of absorbed pump power. The slope efficiency with respect to the absorbed pump power was 66.6%. Furthermore, 5.9 W 458 nm deep‐blue light was acquired by frequency doubling, resulting in an opticalto‐optical efficiency with respect to the absorbed pump power of 25.1%. Comparative results obtained for the pump with diode laser at 809 nm, into the highly‐absorbing 4F5/2 level, are given in order to prove the advantages of the in‐band pumping. (© 2010 by Astro Ltd., Published exclusively by WILEY‐VCH Verlag GmbH & Co. KGaA)

“…879 nm corresponds to the energy difference between the lowest level of 4 I 9/2 and 4 F 3/2 instead of the smallest difference of energy between 4 I 9/2 and 4 F 3/2 . The smallest difference of energy is between Z5 in the 4 I 9/2 and 4 F 3/2 , which corresponds to the wavelength of 913 nm [4,15].…”

Section: Introductionmentioning

confidence: 99%

Low heat and high efficiency Nd:GdVO4 laser pumped by 913 nm

Xiong

Guo

et al. 2010

A Nd:GdVO 4 crystal is pumped directly into its emitting level at 913 nm for the first time to the best of our knowledge. 3.35 W output laser emitting at 1063 nm is achieved in a 1.1 at.% Nd-doped Nd:GdVO 4 . The crystal absorbs pumping light of 4.30 W at 913 nm and produces a very low quantity of heat with the opto-optic conversion efficiency of 77.2%. The average slope efficiency is 81.2% from 0.21 W, at the threshold, to 4.30 W of absorbed pump power. Because of the very weakly thermal effect, the near-diffraction-limit beam is easily obtained with beam quality factor of M 2 ≈ 1.1. The output power and the temperature of crystal versus the absorbed pump power