Nature of wavelength chirping in directly modulated semiconductor lasers

Koch, Thomas; Bowers, John E.

doi:10.1049/el:19840709

Cited by 298 publications

(64 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…2b is a typical value for all devices characterized. It is well known that wavelength chirp will appear when a semiconductor laser is modulated 35 . The varying carrier density changes the refractive index and the optical length of the laser cavity, resulting in an emission wavelength that varies throughout the duration of the optical pumping.…”

Section: Fabricationmentioning

confidence: 99%

Room-temperature InP distributed feedback laser array directly grown on silicon

et al. 2015

View full text Add to dashboard Cite

These authors contributed equally to this work.Fully exploiting the silicon photonics platform requires a fundamentally new approach to realize high-performance laser sources that can be integrated directly using wafer-scale fabrication methods. Direct band gap III-V semiconductors allow efficient light generation but the large mismatch in lattice constant, thermal expansion and crystal polarity makes their epitaxial growth directly on silicon extremely complex. Here, using a selective area growth technique in confined regions, we surpass this fundamental limit and demonstrate an optically pumped InP-based distributed feedback (DFB) laser array grown on (001)-Silicon operating at room temperature and suitable for wavelength-division-multiplexing applications. The novel epitaxial technology suppresses threading dislocations and anti-phase boundaries to a less than 20nm thick layer not affecting the device performance. Using an in-plane laser cavity defined by standard top-down lithographic patterning together with a high yield and high uniformity provides scalability and a straightforward path towards cost-effective cointegration with photonic circuits and III-V FINFET logic.The potential of leveraging well-established and high yield manufacturing processes developed initially by the electronics industry has been the main driver fueling the massive research in silicon photonics over 2 the last decade [1][2][3][4][5][6] . From the start of its development though the lack of efficient optical amplifiers and laser sources monolithically integrated with the silicon platform inhibited the widespread adoption in high-volume applications. Solutions relying on flip-chipping prefabricated laser diodes 7,8 or bonding III-V epitaxial material [9][10][11] are now being deployed in commercially available optical interconnects but are less compatible with standard high-volume and low cost manufacturing processes. Approaches focusing on the engineering of group IV materials have achieved optical gain but still require extensive work to reach room temperature lasing at reasonable efficiency [12][13][14] . Therefore, the monolithic integration of direct bandgap III-V semiconductors, well known to be efficient light emitters, with the silicon photonics platform is heavily investigated. However, considerable hurdles need to be overcome. When directly growing III-V semiconductors on silicon substrates, the large lattice mismatch (εInP/Si = 8.06 %), the difference in thermal expansion and the different polarity of the materials result in large densities of crystalline defects including misfit and threading dislocations, twins, stacking faults and anti-phase boundaries, strongly degrading the performance and reducing the lifetime of any device fabricated in the as-grown layers 15 . Several routes to overcome these issues have been proposed. GaP-related materials can be grown on exact (001) silicon substrates with a small lattice mismatch and pulsed laser oscillation around 980 nm up to 120 K 16 has been achieved but shifting the laser...

show abstract

Section: Fabricationmentioning

confidence: 99%

Room-temperature InP distributed feedback laser array directly grown on silicon

et al. 2015

View full text Add to dashboard Cite

show abstract

“…The basic reason for these phenomena is the changes in optical properties of the fiber medium due to interaction of an intense laser light with matter. Dispersion of the group velocity of electromagnetic waves in a fiber and the frequency chirp [10][11][12] of laser light give rise to the nonlinear distortions of a special type. Such distortions are not related with the optical power of transmitted signals and occur even at low laser light intensities.…”

Section: Transmission Of Light Intensity Modulation Signals In Analogmentioning

confidence: 99%

“…Indeed, the injection current modulation produces a variation in charge carriers concentration, which leads to a variation in the refractive index of the laser active region and, therefore, to a frequency modulation of laser light. Effect of the frequency chirp on light produced by a directly-modulated laser is usually written in the form of relation between the instantaneous frequency ω and the instantaneous power P of the laser radiation, namely [10][11][12],…”

Section: Electrical-to-optical Conversionmentioning

confidence: 99%

Transmission of Light Intensity Modulation Signals in Analog Fiber-Optic Links

Shcherbakov¹,

Solodkov²,

Zadernovsky³

2016

RENSIT

View full text Add to dashboard Cite

“…DM-VCSELs have increasingly gained the interest of researchers due to their low cost, low power consumption, and high speed properties. However, DM-VCSEL cannot manage long-distance transmission in baseband transmission systems because of frequency chirp [2] . Optical-injection-locking (OIL) of semiconductor lasers has been studied to improve the frequency response performance of lasers.…”

mentioning

confidence: 99%