Nature of Interface Defect Buildup in Gated Bipolar Devices Under Low Dose Rate Irradiation

Chen, X.J.; Barnaby, Hugh; Schrimpf, R.D.; Fleetwood, D.M.; Pease, R.L.; Platteter, D.G.; Dunham, G.W.

doi:10.1109/tns.2006.885375

Cited by 32 publications

(5 citation statements)

References 28 publications

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“…The worst case maximum to minimum ratio over the voltage range using the new extraction model is less than 50%. While data on GLPNP BJTs was not available for this study, earlier studies reported results from similar devices [31], [34], [35]. Two papers by Pease extraction of cm at 30 krad( ) is in line with these earlier studies.…”

Section: Validation With Extractionsupporting

confidence: 81%

“…The reduced dependence of the extracted on emitterbase bias, measurement correlation with previous works [31], [34], [35], as well as the accurate fit to the ideality factor (Fig. 5) are all strong indicators that the proposed surface SCR recombination model presented here is considerably more accurate than the standard GP and other conventional BJT models.…”

Section: Validation With Extractionsupporting

confidence: 73%

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Improved Model for Increased Surface Recombination Current in Irradiated Bipolar Junction Transistors

Barnaby

Vermeire

Campola

2015

IEEE Trans. Nucl. Sci.

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Current gain degradation in irradiated bipolar junction transistors is primarily due to excess base current caused by enhanced carrier recombination in the emitter-base space-charge region (SCR). Radiation-induced traps at the interface between silicon and the bipolar base oxide facilitate the recombination process primarily above the sensitive emitter-base junction. This leads to an increase in surface recombination current in the SCR, which is a non-ideal component of the BJT's base current characteristic under active bias conditions. In this paper, we derive a precise analytical model for surface recombination current that captures bias dependencies typically omitted from traditional models. This improved model is validated by comparisons to these traditional approaches.

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Section: Validation With Extractionsupporting

confidence: 81%

Section: Validation With Extractionsupporting

confidence: 73%

Improved Model for Increased Surface Recombination Current in Irradiated Bipolar Junction Transistors

Barnaby

Vermeire

Campola

2015

IEEE Trans. Nucl. Sci.

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“…Although the trend of r in and r o were shown (dashed lines), the determination of these parameters is complex for the following reasons: (1) the collector resistance (and then r o ) is strongly dependent on the device operating point [10], as can be seen in Figure 26; and (2) the emitter resistance is not unique, as it depends on the base current [9]. Some authors formulate the effect of BJT gain degradation as the decrease in collector current with the increase in some component of the BJT base current (Equation ( 1)), which is commonly called excess base current [50][51][52][53]. Also, Equation (2), which presents some variables or parameters of the device, can be (for a certain type of radiation) the source of variation of the BJT gain.…”

Section: Radiation Damage In Bjt As An X-ray Sensormentioning

confidence: 99%

An Overview on Bipolar Junction Transistor as a Sensor for X-ray Beams Used in Medical Diagnosis

Santos

2022

Sensors

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Although not manufactured to be used under X-ray photons, the commercial bipolar junction transistor (BJT) is an electronic device that can be used as an ionizing radiation sensor. In this article an overview on the BJT and its principle of operation were made for the purpose of better understanding how such a semiconductor device behaves when under diagnostic X-ray beam. Therefore, it addresses some topics such as the structure of the device, the bias configuration when operating in active mode, and so on. Even knowing that the most complete theory to describe the “transistor effect” is based on quantum theory (the energy band theory of solids), here it is preferable to take a simpler experimental approach to clearly understand the operation of the BJT. In electronics, the BJT is used as a current amplifier, and depending on the bias and point of view it also becomes a voltage amplifier. In the analysis of BJT under an X-ray beam, in addition to its operation as a sensor to measure the dose or some diagnostic X-ray tube parameter, it has also led to technological innovation in the technique of digital data storage based on the effect of radiation.

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“…While an ITC defect is the result of the reaction of a hole with the defect site containing hydrogen, which finally produces a trapped state in the form of Si dangling bonds. [9][10][11][12] In the BJT structure, both POTCs and ITCs activate the hole-electron recombination process, which increases mainly the current components I B2 and I B3 and then the total base current.…”

Section: Tid Damagesmentioning

confidence: 99%

Bulk and surface damages in complementary bipolar junction transistors produced by high dose irradiation

Assaf

2018

Chinese Phys. B

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Two complementary types NPN and PNP of bipolar junction transistors (BJTs) were exposed to high dose of neutrons and gamma rays. The change in the base and collector currents, minority carriers lifetime, and current gain factor β with respect to the dose were analyzed. The contributions of the base current according to the defect types were also reported. It was declared that the radiation effect of neutrons was almost similar between the two transistor types, this effect at high dose may decrease the value of β to less than one. The Messenger-Spratt equation was used to describe the experimental results in this case. However, the experimental data demonstrated that the effect of gamma rays was generally higher on NPN than PNP transistors. This is mainly attributed to the difference in the behavior of the trapped positive charges in the SiO 2 layers. Meanwhile, this difference tends to be small for high gamma dose.

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Nature of Interface Defect Buildup in Gated Bipolar Devices Under Low Dose Rate Irradiation

Cited by 32 publications

References 28 publications

Improved Model for Increased Surface Recombination Current in Irradiated Bipolar Junction Transistors

Improved Model for Increased Surface Recombination Current in Irradiated Bipolar Junction Transistors

An Overview on Bipolar Junction Transistor as a Sensor for X-ray Beams Used in Medical Diagnosis

Bulk and surface damages in complementary bipolar junction transistors produced by high dose irradiation

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