Nature of energy bands of MgXZn1−XTe mixed crystals near the absorption edge

Chung, Sang-Jo; Kwon, Young–Kyu; Yoon, Chang-Sun; Kim, Byung-Ho; Cha, Deokjoon; Kim, Chang‐Dae; Kim, Wha‐Tek; Hong, Chul−Un

doi:10.1016/s0022-3697(98)00337-0

Cited by 13 publications

(7 citation statements)

References 27 publications

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“…Figure 4 shows the temperature dependent peak energy of A-band. The results are in good agreement with the excitonic band gap of Zn 1-x Mg x Te crystals [7]. These results indicate the P-doped Zn 1-x Mg x Te crystals of good optical quality.…”

Section: Contributedsupporting

confidence: 82%

Temperature dependence of photoluminescence from P‐doped ZnMgTe bulk crystals of high quality grown by Bridgman method

Saito

Shimao

Tanaka

et al. 2010

Phys. Status Solidi (c)

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High quality P‐doped Zn1‐xMgx Te crystals with Mg composition x of 0.09 to 0.3 were grown by vertical Bridgman method. The typical value of the full width at half maximum of (004) X‐ray ricking curve was 65.7 arcsec. For the first time temperature dependence of photoluminescence measurement were successfully attained by using the P‐doped Zn1‐xMgx Te crystals. All the crystals showed not only excitonic emission with no donor‐acceptor pair emission at low temperature but also photoluminescence (PL) band originated from interband transition at room temperature. From the temperature dependent PL intensity of free‐to‐bound (FB) transition emission, the relationship between x and the energy of P acceptor level was estimated by the use of one‐step model of thermal quenching mechanism. The result showed that the acceptor level monotonically increases with increasing x. This relationship seems to be reasonable which was supported by comparison with the energy difference between the peak of FB emission and estimated band gap at 4.2 K. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Contributedsupporting

confidence: 82%

Temperature dependence of photoluminescence from P‐doped ZnMgTe bulk crystals of high quality grown by Bridgman method

Saito

Shimao

Tanaka

et al. 2010

Phys. Status Solidi (c)

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“…The Mg composition obtained from a Vegard's law is consistent with the x value determined by the EDX analysis, using a lattice constant of 6.103 Å for cubic ZnTe and that of 6.42 Å for cubic MgTe [11]. Then, Vegard's law is valid in Zn 1-x Mg x Te ternary alloy system, in agreement with the previous result [7].…”

Section: Introductionsupporting

confidence: 89%

Phosphorus‐doped ZnMgTe bulk crystals grown by Vertical Bridgman Method

Saito¹,

Kinoshita²,

Tanaka³

et al. 2006

Phys. Status Solidi (c)

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Phosphorus-doped Zn 1-x Mg x Te (0 ≤ x ≤ 0.31) bulk crystals with zinc-blende structure were grown by vertical Bridgman technique. Single crystalline wafers cut from the ingots have been systematically characterized by energy dispersive X-ray analysis, photoluminescence, optical reflection and transmission, and Hall measurements together with the evaluation of electroless Pd electrode to Zn 0.9 Mg 0.1 Te. The linear increase in the lattice constant and the band-gap energy with x was confirmed. In photoluminescence spectra at 4.2 K, two distinct band-edge luminescence peaks were observed, whereas there are no deep emission bands. These peaks were assigned to be bound exciton emission due to neutral P acceptor and a P acceptor related free-to-bound transition emission. Electroless Pd electrode shows the specific contact resistance lower than 5×10

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“…The lattice parameter and bandgap of the Zn 1−x Mg x Te crystal can be adjusted by changing the Mg content. [7][8][9][10][11] The emission wavelength of Zn 1−x Mg x Te is in the blue-green band. As the Mg content increases, the emission band moves to the blue light.…”

Section: Introductionmentioning

confidence: 99%

Zn_1−xMg_xTe and P:Zn_1−xMg_xTe (x = 0.06–0.25) bulk crystals grown by travelling Te solution method

Song,

Zhang,

et al. 2024

CrystEngComm

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Nature of energy bands of MgXZn1−XTe mixed crystals near the absorption edge

Cited by 13 publications

References 27 publications

Temperature dependence of photoluminescence from P‐doped ZnMgTe bulk crystals of high quality grown by Bridgman method

Temperature dependence of photoluminescence from P‐doped ZnMgTe bulk crystals of high quality grown by Bridgman method

Phosphorus‐doped ZnMgTe bulk crystals grown by Vertical Bridgman Method

Zn_1−xMg_xTe and P:Zn_1−xMg_xTe (x = 0.06–0.25) bulk crystals grown by travelling Te solution method

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Nature of energy bands of MgXZn1−XTe mixed crystals near the absorption edge

Cited by 13 publications

References 27 publications

Temperature dependence of photoluminescence from P‐doped ZnMgTe bulk crystals of high quality grown by Bridgman method

Temperature dependence of photoluminescence from P‐doped ZnMgTe bulk crystals of high quality grown by Bridgman method

Phosphorus‐doped ZnMgTe bulk crystals grown by Vertical Bridgman Method

Zn1−xMgxTe and P:Zn1−xMgxTe (x = 0.06–0.25) bulk crystals grown by travelling Te solution method

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Product

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Zn_1−xMg_xTe and P:Zn_1−xMg_xTe (x = 0.06–0.25) bulk crystals grown by travelling Te solution method