Naturally formed InxAl1−xAs/InyAl1−yAs vertical superlattices

Jun, Sung Chan; Seong, Tae Yeon; Lee, J. H.; Lee, Bun

doi:10.1063/1.115787

Cited by 67 publications

(40 citation statements)

References 6 publications

(9 reference statements)

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“…Several groups 11,12 have observed lateral composition modulation in the molecular beam epitaxy (MBE) and metalorganic vapor phase epitaxy (MOVPE) layers, which is similar to those presented in Figs. 1a, 2, and 6.…”

Section: Discussionsupporting

confidence: 64%

Structural properties of GaAsN grown on (001) GaAs by metalorganic molecular beam epitaxy

Choi

Seong

et al. 2001

Journal of Elec Materi

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Section: Discussionsupporting

confidence: 64%

Structural properties of GaAsN grown on (001) GaAs by metalorganic molecular beam epitaxy

Choi

Seong

et al. 2001

Journal of Elec Materi

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“…This type of composition modulation occurs regularly in strained short-period superlattices of III-V alloys 14 and has also been observed to arise spontaneously in MOCVD-grown alloys. 11,15,16 The polarization ratios measured here greatly exceed even the theoretical maximum of 0.5 that could occur for perfectly atomically ordered material (see, e.g., Ref. 17).…”

Section: à3mentioning

confidence: 76%

Doping dependence and anisotropy of minority electron mobility in molecular beam epitaxy-grown p type GaInP

Haegel

Christian

Scandrett

et al. 2014

Applied Physics Letters

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Direct imaging of minority electron transport via the spatially resolved recombination luminescence signature has been used to determine carrier diffusion lengths in GaInP as a function of doping. Minority electron mobility values are determined by performing time resolved photoluminescence measurements of carrier lifetime on the same samples. Values at 300 K vary from ∼2000 to 400 cm2/V s and decrease with increasing doping. Anisotropic diffusion lengths and strongly polarized photoluminescence are observed, resulting from lateral composition modulation along the [110] direction. We report anisotropic mobility values associated with carrier transport parallel and perpendicular to the modulation direction.

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“…Many ternary and quaternary alloys show either CuPt-type ordering on particular crystallographic planes like in GaInP alloys [17] or compositional ordering [5][6][7][8][9][10][11][12][13]18]. In most cases, the compositional modulation was related to spinodal decomposition driven by asymmetries in the elastic coefficients and phases with different compositions have been formed [5][6][7][8][9].…”

Section: Discussionmentioning

confidence: 99%

Compositional Modulation in InxGa1-xN

Liliental‐Weber¹,

Zakharov²,

Yu³

et al. 2008

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Public reporting burden for the collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. AbstractTransmission Electron Microscopy and x-ray diffraction were used to study compositional modulation in In x Ga 1-x N layers grown with compositions close to the miscibility gap. The samples (0.34 < x < 0.8) were deposited by molecular beam epitaxy using either a 200-nm-thick AlN or GaN buffer layer grown on a sapphire substrate. In the TEM imaging mode this modulation is seen as black/white fringes which can be considered as self-assembled thin quantum wells. Periodic compositional modulation leads to extra electron diffraction spots and satellite reflections in x-ray diffraction in the θ−2θ coupled geometry. The modulation period was determined using both methods. Larger modulation periods were observed for layers with higher In content and for those having larger mismatch with the underlying AlN buffer layer. Compositional modulation was not observed for a sample with x = 0.34 grown on a GaN buffer layer. Modulated films tend to have large " Stokes shifts" between their absorption edge and photoluminescence peak.

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Naturally formed InxAl1−xAs/InyAl1−yAs vertical superlattices

Abstract: Fabrication and microscopic photoluminescence imaging of ridgetype InGaAs quantum wires grown on a (110) cleaved plane of AlGaAs/GaAs superlattice Appl.

Cited by 67 publications

References 6 publications

Structural properties of GaAsN grown on (001) GaAs by metalorganic molecular beam epitaxy

Structural properties of GaAsN grown on (001) GaAs by metalorganic molecular beam epitaxy

Doping dependence and anisotropy of minority electron mobility in molecular beam epitaxy-grown p type GaInP

Compositional Modulation in InxGa1-xN

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