NASA Goddard Space Flight Center’s Compendium of Radiation Effects Test Results

Topper, Alyson D.; Lauenstein, Jean-Marie; Wilcox, Edward P.; Berg, Melanie D.; Campola, Michael J.; Casey, Megan C.; Wyrwas, Edward J.; O'Bryan, Martha V.; Carstens, Thomas; Fedele, Caroline M.; Forney, James D.; Kim, Hak S.; Osheroff, Jason M.; Phan, Anthony M.; Chaiken, Max F.; Cochran, Donna J.; Pellish, Jonathan A.; Majewicz, Peter J.

doi:10.1109/redw51883.2020.9325841

Cited by 4 publications

(7 citation statements)

References 2 publications

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“…This vulnerability is confirmed by the collected test data (see Tab. S12 -S15 of the Supplementary Material), where SEFIs manifest across NAND and NOR flash devices during active modes [148], [159], [160], [161], [162].…”

Section: E Memoriesmentioning

confidence: 99%

“…Proton testing has evidenced that TID effects are the primary radiation concern, with secondary ions generated by nuclear interactions responsible for observed protoninduced SEEs [155]. Interestingly, SEUs even without observable SEFIs or SELs are seen during proton testing, for example in the Macronix TM MX30LF4G18AC NAND flash, highlighting the complex nature of the response of these devices to proton irradiation [148], [159].…”

Section: E Memoriesmentioning

confidence: 99%

“…S12 -S15 of the Supplementary Material underscore this effect, showing data instability of memories over time after TID exposure with increased errors across 16/64 Gb SLC NAND flash, and complete functional failures for doses between 30-60 krad [163], [164]. Data collected on NAND flash devices also indicate a compromise in charge storage from TID, and SEUs even occurring during the powered-off state (e.g., see Kioxia America TM TC58NVG2S0HTAI0) [148], [159].…”

Section: E Memoriesmentioning

confidence: 99%

“…Notably, lower energy ions generate larger shifts, attributed to their smaller track sizes that enhance tunnelling efficiency [156]. Consequently, higher LET particles induce both more frequent SEUs and MBUs in NAND and NOR devices, as evidenced by the collected test data [148], [159], [160], [161], [162].…”

Section: E Memoriesmentioning

confidence: 99%

“…Importantly, SEFIs, causing interruptions like buffer write/read errors or extended erase delays, occur during dynamic testing. Some NOR flash devices also demonstrate vulnerability to SELs, resulting in high leakage currents, and requiring power cycles [148], [159], [160], [161], [162] Proton irradiation testing yields varied results. The Micron TM PC28F00AM29EW NOR flash memory shows exceptional resilience, exhibiting no latchups or ruptures even under extreme test conditions and low error rates, such as limited erase block or write buffer timing errors.…”

Section: E Memoriesmentioning

confidence: 99%

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COTS Devices for Space Missions in LEO

Brunetti,

Campiti,

Tagliente

et al. 2024

IEEE Access

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In the framework of the NewSpace revolution, time-to-market and budget constraints drive the development of small and medium-sized satellites in Low Earth Orbit (LEO) orbit. The adoption of Commercial Off-the-Shelf (COTS) components represents the current trend to fulfill the NewSpace goals, given their low cost, wide product availability, small time-to-market, and the ability to integrate the most recent advancements in space applications. However, migrating from radiation-hardened (rad-hard) devices to COTS ones requires ensuring comparable reliability levels. To this end, an "upscreening" of the COTS devices and systems should be performed in compliance with widely adopted standard regulations, such as those used by ESA or NASA. In this paper, we review COTS components and systems, such as diodes, Bipolar Junction Transistors (BJTs), Field Effect Transistors (FETs), Operational Amplifiers (OPAMPs), memories, and Field Programmable Gate Arrays (FPGAs), proven-flight or ad-hoc tested for compliance with standard regulations. In conclusion, the most promising devices in terms of cost and radiation tolerances are identified, providing useful benchmarks for space engineers developing COTS-based innovative systems.

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Section: E Memoriesmentioning

confidence: 99%

Section: E Memoriesmentioning

confidence: 99%