1992
DOI: 10.1007/bf00620152
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Narrow spectral linewidth semiconductor lasers

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Cited by 12 publications
(2 citation statements)
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“…Ehj(k) = -Ehj h2k2i(2mh*) (17) J'r = 1/i1/me* + l/mhl (18) in the small-signal analysis of Eq.s (6) and (7) we assume that the laser is driven by a dc voltage V and is modulated by a small ac voltage LV(t). The injected current density is J(t) = J0 + zJ(t), while the carrier and photon densities can be written in the form flt(t) = to nt(t) and S(t) = Sj0 + respectively, to and Snjo being the stationary values.…”
Section: Theorymentioning
confidence: 99%
“…Ehj(k) = -Ehj h2k2i(2mh*) (17) J'r = 1/i1/me* + l/mhl (18) in the small-signal analysis of Eq.s (6) and (7) we assume that the laser is driven by a dc voltage V and is modulated by a small ac voltage LV(t). The injected current density is J(t) = J0 + zJ(t), while the carrier and photon densities can be written in the form flt(t) = to nt(t) and S(t) = Sj0 + respectively, to and Snjo being the stationary values.…”
Section: Theorymentioning
confidence: 99%
“…A common fabrication method that produces very homogeneous gratings inscribes a laser interference pattern either directly into a photosensitive guiding region [2] or into a photoresist followed by transfer of the obtained periodic pattern to the guiding region or a cladding, e.g., by an etch process [6], [7], [14]. Since laser interference does not allow one to produce a discrete phase shift, a distributed phase shift can instead be created, e.g., by a widening of the guiding region, which increases the effective refractive index by the desired amount [7], [15]- [17].…”
Section: Introductionmentioning
confidence: 99%