“…The DFB lasers were fabricated on an aluminium-free active area [5,6] four-quantum-well GaAs/AlGaAs wafer material, with an epilayer structure that was designed for narrow-linewidth applications. The epilayer material was optimized over previous designs at 780.24 nm [5,6] to reduce modal propagation losses and far-field emission pattern to decrease the beam divergence in the epilayer direction to 20º, potentially improving the single-mode fibre coupling up to a simulated value of 80%. A third-order Bragg grating was patterned on a 500 nm thick hydrogen silsesquioxane (HSQ) resist mask by electron beam lithography (EBL).…”