1991
DOI: 10.1049/el:19910696
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Narrow line semiconductor laser using fibre grating

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Cited by 90 publications
(16 citation statements)
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“…A schematic of the prototype ultra‐low noise (ULN) ECDL is shown in Figure a. It combines a high performance semiconductor gain chip (GC) and a polarization‐maintaining (PM) optical fiber with an integrated custom designed fiber Bragg grating (FBG), which forms one end of the ECDL. The GC consists of a multi‐quantum well (MQW) active region grown on an InP substrate.…”
Section: Methodsmentioning
confidence: 99%
“…A schematic of the prototype ultra‐low noise (ULN) ECDL is shown in Figure a. It combines a high performance semiconductor gain chip (GC) and a polarization‐maintaining (PM) optical fiber with an integrated custom designed fiber Bragg grating (FBG), which forms one end of the ECDL. The GC consists of a multi‐quantum well (MQW) active region grown on an InP substrate.…”
Section: Methodsmentioning
confidence: 99%
“…Many techniques have been studied to reduce the linewidth of lasers, and great developments have been achieved on narrowing the linewidth of lasers. The technique of distributed Bragg reflector and distributed feedback can reduce the linewidth of a semiconductor laser to less than 100 kHz [4], [5]. Especially in recent years, the planar-waveguide external-cavity laser technology is able to squeeze the linewidth of laser diodes to as narrow as about 3 kHz, which is approaching the performance of a typical fiber laser [6].…”
Section: Introductionmentioning
confidence: 99%
“…Fiber Bragg gratings (FBGs) have been broadly used in optical communication and sensor system after the photosensitivity of Ge-doped fibers was discovered in 1978 [1][2][3][4].…”
Section: Introductionmentioning
confidence: 99%