Narrow-gap lead salts

Nimtz, G.; Schlicht, B.

doi:10.1007/bfb0044920

Cited by 110 publications

(94 citation statements)

References 239 publications

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“…The lattice parameter a, calculated using the Rietveld method (see the inset to Fig. 1) is close to the value for SnTe crystals, i.e., a = 6.327 Å [9]. The a(x) changes according to the Vegard law (see the inset to Fig.…”

Section: Resultssupporting

confidence: 65%

Magnetic Order and Magnetic Inhomogeneities in SnCrTe-PbCrTe Solid Solutions

et al. 2014

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We present the studies of structural, electrical and magnetic properties of bulk Sn1−x−y PbxCry Te mixed crystals with chemical composition 0.18 ≤ x ≤ 0.35 and 0.007 ≤ y ≤ 0.071. The magnetometric studies indicate that for the high Cr-content, y = 0.071, the alloy shows ferromagnetic alignment with the Curie temperature, TC, around 265 K. The Cr5Te8 clusters are responsible for the ferromagnetic order. At low Cr content, y ≈ 0.01, a peak in the ac magnetic susceptibility identied as the cluster-glass-like transition is observed at a temperature about 130 K. The cluster-glass-like transition is likely due to the presence of Cr2Te3 clusters in the samples with y ≈ 0.01. The transport characterization of the samples indicated strong metallic p-type conductivity with relatively high carrier concentration, n > 10 20 cm −3 , and carrier mobility, µ > 150 cm 2 /(V s).

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Section: Resultssupporting

confidence: 65%

Magnetic Order and Magnetic Inhomogeneities in SnCrTe-PbCrTe Solid Solutions

et al. 2014

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“…Similar conclusions can be made on the sample with x=0.15 because of its close values of b and f L with x=0 even though its higher carrier density. The smaller deformation potential for the heavy hole (Σ) band as compared with that of light hole (L) band, is presumably due to the different location in k-space 3, 11,12,29 , which is similar to other semiconductors such as Si and Ge 30 .…”

mentioning

confidence: 99%

Convergence of electronic bands for high performance bulk thermoelectrics

Pei

Xiao-li

LaLonde

et al. 2011

Nature

3,535

2,870

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“…PbTe is a narrow-gap semiconductor that is widely used to manufacture mid-wavelength infrared lasers and detectors [1][2][3]. It is also known as important material for thermoelectric applications.…”

Section: Introductionmentioning

confidence: 99%

Injection current and infrared photosensitivity in isotype p-PbTe/p-CdTe heterojunctions

Tetyorkin¹

2013

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. Iso-type p-PbTe/p-CdTe heterojunctions were grown on BaF 2 substrates by using the hot-wall epitaxy technique. The growth details are presented. The carrier transport mechanism was investigated by means of the current-voltage measurements. At 77 K the dominant conduction mechanism was found to be the space-charge-limited current. The photovoltaic response in the long-wave infrared region with the half-peak cut-off wavelength ranged from 8.0 to 9.0 m was observed in these heterojunctions for the first time. The possible mechanism of the photoresponse is the internal photoemission of holes from p-PbTe across the heterojunction barrier.

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Narrow-gap lead salts

Cited by 110 publications

References 239 publications

Magnetic Order and Magnetic Inhomogeneities in SnCrTe-PbCrTe Solid Solutions

Magnetic Order and Magnetic Inhomogeneities in SnCrTe-PbCrTe Solid Solutions

Convergence of electronic bands for high performance bulk thermoelectrics

Injection current and infrared photosensitivity in isotype p-PbTe/p-CdTe heterojunctions

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