Narrow emission of blue GaN-based vertical-cavity surface-emitting lasers with a curved mirror

Hayashi, Kentaro; Hamaguchi, Tatsushi; Kearns, Jared; Nakayama, Eiji; Hoshina, Yukio; Jyokawa, Tatsuro; Ohara, Maho; Kobayashi, Noriko; Nagane, Shouetsu; Sato, Kōichi; Nakamura, Yuki; Watanabe, Takumi; Makino, Tomohiro; Ito, Maiko; Koda, Rintaro; Kawanishi, Hidekazu; Futagawa, Noriyuki

doi:10.1109/islc51662.2021.9615750

Cited by 3 publications

(1 citation statement)

References 5 publications

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“…This leads us to conclude that there is further improvement potential for facet etching process and that it should be possible to reach this data in a mass production, once the process is fully understood and optimized. This suggests that etched facet technology could be an alternative to VCSEL technology, where similar threshold currents for diode lasers emitting in the blue wavelength range can be reached [13]. However, one advantage of the etched facet technology compared to VCSEL technology is, that threshold currents and output powers can easily be tailored to the needs of different applications by a change of the on-wafer mirror design and resonator length.…”

Section: Electro-optical Data Of Lasers With Etched Facetsmentioning

confidence: 99%

InGaN semiconductor laser diodes for the visible spectral range: design and process optimization of single emitters and bars for applications from mW to kW output power

Gerhard

Naehle²,

Jentzsch

et al. 2023

Gallium Nitride Materials and Devices XVIII

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InGaN lasers in the blue and green wavelength range have opened a wide variety of applications in the past years, which all require unique properties of the employed laser chips. In this paper we will show design and process developments for various InGaN laser designs, each optimized for its specific application.For applications which are very sensitive to energy consumption, like mobile AR/VR devices, we investigated InGaN laser chips with resonator lengths as short as 50 µm. To achieve this, we developed an etched facets technology to overcome the challenges of scribing and breaking for facet generation for such short resonator lengths. The etched facets of these devices are coated on-wafer with a dielectric mirror to achieve the desired reflectivity. Depending on the reflectivity chosen, these devices show ultra-low threshold currents below 3mA and output powers above 50 mW. Combined with a flip-chip design with both contacts on one side, such chips can be integrated into silicon wafer-based beam combiners to generate RBG PIC chips for VR/AR laser projection.For high power applications, we will present data of laser bars. Bars emitting at 430 nm achieved 100 W of continuouswave output power per bar and conversion efficiencies of 50%. Together with bars emitting at 450 nm, that were shown in previous publications, wavelength-multiplexing for materials-processing systems can be realized yielding blue laser light sources with multiple kilowatts of output powers.

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Section: Electro-optical Data Of Lasers With Etched Facetsmentioning

confidence: 99%

InGaN semiconductor laser diodes for the visible spectral range: design and process optimization of single emitters and bars for applications from mW to kW output power

Gerhard

Naehle²,

Jentzsch

et al. 2023

Gallium Nitride Materials and Devices XVIII

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Narrow Emission of Blue GaN-Based Vertical-Cavity Surface-Emitting Lasers With a Curved Mirror

et al. 2022

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We report a narrow divergence angle in a blue gallium-nitride-based visible vertical-cavity surface-emitting laser (GaN-VCSEL) with a curved mirror. This device exhibited continuous-wave operation at a wavelength of 447.9 nm. The fullwidth at half-maximum divergence angle of the 8 µm-aperture VCSEL was 3.9°when the device was operated at a current of 1.2 × Ith, where Ith is the threshold current. In this type of cavity, the radius of curvature (ROC) of the curved mirror determines the near-field pattern (NPF) and far-field pattern (FFP). The authors fabricated devices having ROC up to 988 µm, which is more than 10 times greater than the ROC of the mirror used in the previously reported structures, allowing this narrow emission. The I-L characteristics showed that the Ith value increased with increasing ROC. The present study investigates the mechanism behind this tendency in detail.

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Mode control in long cavity VCSELs with a curved mirror

Kearns

Hamaguchi

Hayashi

et al. 2022

Gallium Nitride Materials and Devices XVII

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Narrow emission of blue GaN-based vertical-cavity surface-emitting lasers with a curved mirror

Cited by 3 publications

References 5 publications

InGaN semiconductor laser diodes for the visible spectral range: design and process optimization of single emitters and bars for applications from mW to kW output power

InGaN semiconductor laser diodes for the visible spectral range: design and process optimization of single emitters and bars for applications from mW to kW output power

Narrow Emission of Blue GaN-Based Vertical-Cavity Surface-Emitting Lasers With a Curved Mirror

Mode control in long cavity VCSELs with a curved mirror

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