Narrow Diameter Distributions of Metallic Arc Discharge Single‐Walled Carbon Nanotubes via Dual‐Iteration Density Gradient Ultracentrifugation

Tyler, Timothy P.; Shastry, Tejas A.; Leever, Benjamin J.; Hersam, Mark C.

doi:10.1002/adma.201201728

Cited by 44 publications

(50 citation statements)

References 30 publications

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“…In particular, Ghosh et al sorted various chiral species of HiPCO SWNTs with nonlinear density gradients and identified the mirror‐image isomers (enantiomers) of SWNTs by fluorescence and circular dichroism spectra . Enriched metallic SWNTs and specific SWNTs of peapod structure were also separated in subsequent studies …”

Section: Solution‐processed Semiconducting Carbon Nanotube Transistorsmentioning

confidence: 99%

Printable Semiconductors for Backplane TFTs of Flexible OLED Displays

Zhu

Shin

Liu

et al. 2019

Adv Funct Materials

159

130

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Studies on printable semiconductors and technologies have increased rapidly over recent decades, pioneering novel applications in many fields, such as energy, sensing, logic circuits, and information displays. The newest display technologies are already turning to metal oxide semiconductors, i.e., indium gallium zinc oxide, for the improvements needed to drive active matrix organic light-emitting diodes. Convenience and portability will be realized with flexible and wearable displays in the future. This report summarizes recent progress on the development of solution-processed thin film transistors, especially those deposited at low temperatures for next-generation flexible smart displays. The first part provides an overview on the history and current status of displays. Then, recent advances in state-of-the-art solution-processed transistors based on different semiconductors are presented, including metal oxides, organic materials, perovskites, and carbon nanotubes. Finally, conclusions are drawn and the remaining challenges and future perspectives are discussed. a large common cathode (opaque metal). This means that the light emission goes through the backplane and the TFT arrays are able to block the light, resulting in the reduced emission fill factor of the display. This mode is also called bottom emission. One effective way to avoid the light obstruction from TFTs in the backplane is to use top-emitting OLEDs, which have a transparent cathode. [2] In 2004, Pennsylvania State University demonstrated the first flexible phosphorescent AMOLED display with hydrogenated amorphous silicon on a 4 in. polyimide (PI) substrate. [7] One year later, a 48 × 48 organic pentacene TFT-driven AMOLED display on a polyethylene terephthalate (PET) substrate was reported by the same group. [8] In 2005, by employing a top-emission structure, researchers at Sony Corp. demonstrated the first full-color imaging on a flexible AMOLED with a pixel resolution of 80 ppi. [9] In 2013, Samsung Electronics showed curved OLED TVs for the first time. Two years later, the same company unveiled a smartphone with a curved edge display (Galaxy S6 Edge), which used touch sensors to improve the user interface and device design. Most recently, LG Display succeeded in developing the world's first large-size 77 in. transparent and flexible OLED display, which could be rolled up to a radius of 80 mm. [10] The ideal flexible AMOLED backplane should be robust, rollable/bendable, capable of complementary metal oxide semiconductor (CMOS) operation, and should lend itself to low-cost manufacturing. To advance toward next-generation flexible AMOLED displays, two key technological goals should be satisfied during fabrication. One is to develop TFT backplanes with good uniformity, stability, and electrical performance. Amorphous silicon (a-Si) TFTs are well known for their uniform electrical characteristics (µ FE < 1 cm 2 V −1 s −1 and I on /I off > 10 6 ) and have achieved great success in flat-panel LCD displays. However, the relatively low µ FE and the lig...

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Section: Solution‐processed Semiconducting Carbon Nanotube Transistorsmentioning

confidence: 99%

Printable Semiconductors for Backplane TFTs of Flexible OLED Displays

Zhu

Shin

Liu

et al. 2019

Adv Funct Materials

159

130

View full text Add to dashboard Cite

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“…Even though the technique has been developed to separate metallic and semiconducting SWNTs, the wide range of variation in the diameter of SWNT, causes individual SWNTs based devices to show variation in their performance such as mobility and current on-off ratio. Very recently, effective technique had been developed demonstrating narrow distribution of diameters and chirality of SWNTs 136,137 which could facilitate more homogeneous device performance and the future effort should be directed in the DEP assembly of uniformly mono-dispersed SWNTs for device application. In addition, techniques need to be developed to improve the contact resistance of the DEP assembled SWNTs.…”

Section: Conclusion and Future Outlookmentioning

confidence: 99%

Recent progress in parallel fabrication of individual single walled carbon nanotube devices using dielectrophoresis

Islam¹,

Khondaker²

2014

Mat Express

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Single walled carbon nanotubes (SWNTs) have attracted immense research interest because of their remarkable physical and electronic properties. In particular, electronic devices fabricated using individual SWNT have shown outstanding device performance surpassing those of Si. However, for the widespread application of SWNTs based electronic devices, parallel fabrication techniques along with Complementary Metal Oxide (CMOS) compatibility are required. One technique that has the potential to integrate SWNTs at the selected position of the circuit in a parallel fashion is AC dielectrophoresis (DEP). In this paper, we review recent progress in the parallel fabrication of SWNT-based devices using DEP. The review begins with a theoretical background for the DEP and then discusses various parameters affecting DEP assembly of SWNTs. We also review the electronic transport properties of the DEP assembled devices and show that high performance devices can be fabricated using DEP. The technique for fabricating all semiconducting field effect transistor using DEP is also reviewed. Finally, we discuss the challenges and opportunities for the DEP assembly of SWNTs.

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“…1(d) illustrates the energy levels of the contact metals and the semiconductor band edges based on literature values. 31,32 A detailed description on the synthesis of ZTO and semiconducting SWCNT inks are described in our previous work. 18,28,29 The electrical characteristics of both TFTs and inverters were measured in ambient conditions using a HP 4155C semiconductor parameter analyzer.…”

Section: Inkjet Printed Ambipolar Transistors and Inverters Based On mentioning

confidence: 99%

Inkjet printed ambipolar transistors and inverters based on carbon nanotube/zinc tin oxide heterostructures

Kim

Jang

Geier

et al. 2014

Applied Physics Letters

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We report ambipolar field-effect transistors (FETs) consisting of inkjet printed semiconductor bilayer heterostructures utilizing semiconducting single-walled carbon nanotubes (SWCNTs) and amorphous zinc tin oxide (ZTO). The bilayer structure allows for electron transport to occur principally in the amorphous oxide layer and hole transport to occur exclusively in the SWCNT layer. This results in balanced electron and hole mobilities exceeding 2 cm2 V−1 s−1 at low operating voltages (<5 V) in air. We further show that the SWCNT-ZTO hybrid ambipolar FETs can be integrated into functional inverter circuits that display high peak gain (>10). This work provides a pathway for realizing solution processable, inkjet printable, large area electronic devices, and systems based on SWCNT-amorphous oxide heterostructures.

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Narrow Diameter Distributions of Metallic Arc Discharge Single‐Walled Carbon Nanotubes via Dual‐Iteration Density Gradient Ultracentrifugation

Cited by 44 publications

References 30 publications

Printable Semiconductors for Backplane TFTs of Flexible OLED Displays

Printable Semiconductors for Backplane TFTs of Flexible OLED Displays

Recent progress in parallel fabrication of individual single walled carbon nanotube devices using dielectrophoresis

Inkjet printed ambipolar transistors and inverters based on carbon nanotube/zinc tin oxide heterostructures

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