2007
DOI: 10.1016/j.optcom.2007.08.043
|View full text |Cite
|
Sign up to set email alerts
|

Narrow bandwidth interference filter-stabilized diode laser systems for the manipulation of neutral atoms

Abstract: We present and investigate different external cavity diode laser (ECDL) configurations for the manipulation of neutral atoms, wavelength-stabilized by a narrow-band high transmission interference filter. A novel diode laser, providing high output power of more than 1 W, with a linewidth of less than 85 kHz, based on a self-seeded tapered amplifier chip has been developed. Additionally, we compare the optical and spectral properties of two laser systems based on common laser diodes, differing in their coating, … Show more

Help me understand this report
View preprint versions

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
46
0

Year Published

2008
2008
2023
2023

Publication Types

Select...
7
2

Relationship

3
6

Authors

Journals

citations
Cited by 57 publications
(46 citation statements)
references
References 10 publications
0
46
0
Order By: Relevance
“…They used an intra-cavity interference filter as a frequency selective element and achieved an output power of a few 10 mW with a short term and intrinsic linewidth of 157 kHz and 14 kHz, respectively. Gilowski and co-workers [22] applied this concept to realize lasers for experiments on ultracold Rb atoms and used a tapered gain chip to boost the output power of the laser. They achieved about 1 W of optical power at 780 nm with a short term and intrinsic linewidth of 187 kHz and 85 kHz, respectively.…”
Section: Electro-optical Characterization Of the Micro-integrated Ecdlmentioning
confidence: 99%
“…They used an intra-cavity interference filter as a frequency selective element and achieved an output power of a few 10 mW with a short term and intrinsic linewidth of 157 kHz and 14 kHz, respectively. Gilowski and co-workers [22] applied this concept to realize lasers for experiments on ultracold Rb atoms and used a tapered gain chip to boost the output power of the laser. They achieved about 1 W of optical power at 780 nm with a short term and intrinsic linewidth of 187 kHz and 85 kHz, respectively.…”
Section: Electro-optical Characterization Of the Micro-integrated Ecdlmentioning
confidence: 99%
“…The frequency of a filter-stabilized 698 nm extended-cavity laser diode [19,20] is locked to the cavity via the PoundDrever-Hall (PDH) technique [21]. Light is sent through an offset acousto-optic modulator (AOM), which allows tuning the frequency to the 87 Sr clock transition, and via a 2 m long optical fiber to the vibration isolation table.…”
mentioning
confidence: 99%
“…Using the technique of moving molasses, the atoms are loaded into the interferometry chamber with a temperature of about 8 �K and a drift velocity of 2.8 m/s. The optical cooling is realized by amplified diode laser systems and a new high power self-seeded tapered amplifier [4], [5]. The sensor operates in a so called symmetric Ramsey-Borde configuration consisting of four nl2-pulses enclosing an area of 8.6 mm 2 by the atomic trajectories.…”
mentioning
confidence: 99%