Narrow-band tunable terahertz detector in antiferromagnets via staggered-field and antidamping torques

Gomonay, Olena; Jungwirth, T.; Sinova, Jairo

doi:10.1103/physrevb.98.104430

Cited by 42 publications

(28 citation statements)

References 28 publications

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“…Recently, 15,16 it has been theoretically proposed to use active AFM generators for the detection of external THz-frequency signals via the mechanism of injection-locking of such a signal to the oscillations generated by a DC-driven AFM/HM THz generator.…”

mentioning

confidence: 99%

Electrically tunable detector of THz-frequency signals based on an antiferromagnet

Сафин

Puliafito

Carpentieri

et al. 2020

Applied Physics Letters

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A concept of an electrically tunable resonance detector of THz-frequency signals based on an antiferromagnetic/heavy metal (AFM/HM) heterostructure is proposed. The conversion of a THz-frequency input signal into DC voltage is done using the inverse spin Hall effect in an (AFM/HM) bilayer. An additional bias DC in the HM layer can be used to vary the effective anisotropy of the AFM and, therefore, to tune the antiferromagnetic resonance (AFMR) frequency. The proposed AFM/HM heterostructure works as a resonance-type quadratic detector, which can be tuned by the bias current in the range of at least 10% of the AFMR frequency, and our estimations show that the sensitivity of this detector could be comparable to that of modern detectors based on the Schottky, Gunn, or graphene-based diodes.

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mentioning

confidence: 99%

Electrically tunable detector of THz-frequency signals based on an antiferromagnet

Сафин

Puliafito

Carpentieri

et al. 2020

Applied Physics Letters

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“…Here, H eff i represents the effective field at each lattice position, which depends on the interactions exposed in Eq. ( 1), as H eff i = − 1 µ0µs δw δmi , and the damping parameter is α = 0.001 [18,34,45]. In this case, the computational domain consists of 60000 cells along the x-th propagation direction, one cell width with periodic boundary conditions along y-th direction, and one cell thick along the z-th direction [46].…”

Section: Relativistic and Inertial Domain Wall Dynamic Signaturesmentioning

confidence: 99%

Inertial domain wall characterization in layered multisublattice antiferromagnets

Rama-Eiroa,

Roy,

González

et al. 2021

Preprint

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The motion of a Néel-like 180 • domain wall induced by a time-dependent staggered spin-orbit field in the layered collinear antiferromagnet Mn2Au is explored. Through an analytically-based two sublattices nonlinear σ-model, it is possible to replicate accurately the relativistic and inertial traces intrinsic to the magnetic texture dynamics obtained through atomistic spin dynamics simulations for quasistatic processes. In the case in which the steady-state magnetic soliton motion is extinguished due to the abrupt shutdown of the spin-orbit field, the rigid domain wall profile approximation is no longer suitable. Although it is not feasible to carry out a detailed follow-up of its temporal evolution in this case, it is possible to predict the inertial-based distance travelled by it in relation to its steadystate relativistic mass. This exhaustive dynamical characterization for different time-dependent regimes is of potential interest in antiferromagnetic domain wall-based device applications.

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“…Domain morphologies in AF thin films vary considerably with thickness and nanostructure shape which has been ascribed to strain effects, although evidence for a direct relationship is lacking [11][12][13][14][15] . To date, device concepts have considered an ideal AF spin lattice 3,16,17 , but high-resolution AF domain imaging has revealed pronounced non-uniformities and pinning effects during domain switching 5,6,8,[18][19][20] .…”

Section: Introductionmentioning

confidence: 99%

Defect-driven antiferromagnetic domain walls in CuMnAs films

Reimers,

Kriegner,

Gomonay

et al. 2021

Preprint

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Efficient manipulation of antiferromagnetic (AF) domains and domain walls has opened up new avenues of research towards ultrafast, high-density spintronic devices.AF domain structures are known to be sensitive to magnetoelastic effects, but the microscopic interplay of crystalline defects, strain and magnetic ordering remains largely unknown. Here, we reveal, using photoemission electron microscopy combined with scanning X-ray diffraction imaging and micromagnetic simulations, that the AF domain structure in CuMnAs thin films is dominated by nanoscale structural twin defects.We demonstrate that microtwin defects, which develop across the entire thickness of the film and terminate on the surface as characteristic lines, determine the location and orientation of 180°and 90°domain walls. The results emphasize the crucial role of nanoscale crystalline defects in determining the AF domains and domain walls, and provide a route to optimizing device performance.

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Narrow-band tunable terahertz detector in antiferromagnets via staggered-field and antidamping torques

Cited by 42 publications

References 28 publications

Electrically tunable detector of THz-frequency signals based on an antiferromagnet

Electrically tunable detector of THz-frequency signals based on an antiferromagnet

Inertial domain wall characterization in layered multisublattice antiferromagnets

Defect-driven antiferromagnetic domain walls in CuMnAs films

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