Narrow-band single-photon emission in the near infrared for quantum key distribution

Wu, E; Jacques, Vincent; Zeng, Heping; Grangier, Philippe; Treussart, François; Roch, Jean-François

doi:10.1364/oe.14.001296

Cited by 76 publications

(86 citation statements)

References 22 publications

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“…This lifetime is shorter that the typical lifetime of NV centers in nanodiamonds [147,148], which indicates a strong dipole transition of the nickel related center. This lifetime is in agreement with previous reports on other nickel related centers in diamond [28,196], although it is important to stress that these are not the same centers as reported previously by other groups [27,28]. The short lifetime and an emission centered in the NIR are very attractive characteristics for facilitating these nickel related centers in practical applications such as QKD.…”

Section: Chapter 6 Fabrication Of Optical Centers By Incorporation Osupporting

confidence: 91%

“…Previous determinations associated to NE8 complex in bulk type IIa diamond [29,196], and CVD nanodiamonds [28] showed a ratio r 23 /r 31 of 2.8, 1.6 and 0.8 respectively, justifying much lower saturation rates of the NE8 center with respect to the 749 nm emitter. In addition, the 749 nm center possesses a shorter lifetime than NE8, which also contributes to the higher emission rates.…”

Section: Ultra Bright Single Photon Sources In Cvd Diamond Crystalsmentioning

confidence: 87%

“…As was mentioned in the introduction, the NE8 center is attracting some attention as a SPS due to its narrow emission in the NIR (ZPL centered at 793 nm). Previously, nickel-nitrogen related complexes were identified in diamonds grown by HPHT method [29,196] on a single level. These centers were natively present in the crystal, most likely due the use of nickel as a catalyst.…”

Section: Direct Implantation Into Nitrogen Containing Bulk Diamond Crmentioning

confidence: 99%

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Novel Single Photon Emitters Based on Color Centers in Diamond

Aharonovich¹,

Castelletto²,

Prawer³

2011

AIP Conference Proceedings

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Exploitation of emerging quantum technologies requires efficient fabrication of key building blocks. Single photon sources are one of these fundamental constituents that are presently pushing the bounds of existing materials and fabrication techniques. Color centers in diamond are very attractive in this respect since they are the only photostable solid-state single photon emitters operating at room temperature known to date.The Nitrogen-Vacancy (NV) complex is one example of such an optical center and has been subject to intensive research due to the availability of optical readout of its individual electronic spin state. However, the NV center has fundamental limitations: strong phonon coupling of the excited state which results in a broad photoluminescence spectrum (~ 100 nm) of which the zero-phonon line makes up only 4%. Emission of single photons in the zero phonon line is then extremely weak, typically on the order of a few thousands of photons per second. Such count rates are insufficient for the realization of advanced quantum information processing protocols.To move beyond the limitations of the NV there is an emerging need to identify and fabricate novel diamond based single photon emitters with improved photo-physical characteristics. Development of such emitters is the main goal of this thesis.We first concentrate on the recent progress in materials science and fabrication techniques of high quality nanodiamond crystals. We demonstrate the ability to grow high quality, submicron sized diamond crystals with a control over their final size and density using a microwave assisted chemical vapor deposition.We then study two methodologies to engineer diamond based single photon emitters in the grown nanodiamonds. In the first, nickel is implanted into the substrate onto which the nanocrystals are subsequently grown. During the diamond growth, the substrate is slightly etched and the nickel atoms diffuse and incorporate into the growing crystals. In the second we employ direct ion implantation of nickel into already deposited individual diamond nanocrystals. Optical and correlation spectroscopy measurements reveal that these methodologies are effective to fabricate nickel related single photon emitters, with zero phonon lines centered in the near infra-red and a short excited state lifetime (~3 ns).ii Furthermore, the ability of diamond to host various luminescence centers prompted the discovery of a new class of ultra bright single photon emitters. These new emitters found in diamond crystals grown on sapphire substrate and assigned to chromium, which is present in the substrate and incorporated into the crystal during the growth. Nanodiamonds hosting these centers deliver outstanding performance such as narrow photoluminescence in the near infra-red and ultra bright single photon emission with count rate of ~ 3.2×10 6 counts/s -the brightest single photon source known to date.Importantly, some of the emitters exhibit a photon statistics without any photon bunching at saturation, indicating a two-...

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Section: Chapter 6 Fabrication Of Optical Centers By Incorporation Osupporting

confidence: 91%

Section: Ultra Bright Single Photon Sources In Cvd Diamond Crystalsmentioning

confidence: 87%

Section: Direct Implantation Into Nitrogen Containing Bulk Diamond Crmentioning

confidence: 99%

See 1 more Smart Citation

Novel Single Photon Emitters Based on Color Centers in Diamond

Aharonovich¹,

Castelletto²,

Prawer³

2011

AIP Conference Proceedings

View full text Add to dashboard Cite

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“…The spin bath can be built up by electron or nuclear spins. 27,28 For NV defects, the spin dephasing time caused by paramagnetic 13 C nuclei in natural abundance is some few hundreds of microseconds. The NV defects created in an isotopically enriched 12 C diamond show a spin coherence time close to about 2 ms. 29 The major cause of decoherence in our nanocystals, however, is obviously other spins interacting much more strongly with the NV spin.…”

Section: Resultsmentioning

confidence: 99%

Fluorescence and Spin Properties of Defects in Single Digit Nanodiamonds

et al. 2009

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This article reports stable photoluminescence and high-contrast optically detected electron spin resonance (ODESR) from single nitrogen-vacancy (NV) defect centers created within ultrasmall, disperse nanodiamonds of radius less than 4 nm. Unexpectedly, the efficiency for the production of NV fluorescent defects by electron irradiation is found to be independent of the size of the nanocrystals. Fluorescence lifetime imaging shows lifetimes with a mean value of around 17 ns, only slightly longer than the bulk value of the defects. After proper surface cleaning, the dephasing times of the electron spin resonance in the nanocrystals approach values of some microseconds, which is typical for the type Ib diamond from which the nanoparticle is made. We conclude that despite the tiny size of these nanodiamonds the photoactive nitrogen-vacancy color centers retain their bulk properties to the benefit of numerous exciting potential applications in photonics, biomedical labeling, and imaging.

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“…Figures 2(b) and 2(d) display the extracted λ 1 , λ 2 , and a as a function of excitation powers, before and after blinking was induced. The power dependence of λ 1 , λ 2 , and a is fitted by assuming a three-level model with a shelving state that depends linearly on the excitation power for both "before" and "after" blinking (see Supplemental Material [17] for detailed analysis) [28][29][30]. The parameter λ 1 before and after blinking remains unchanged, hinting that the radiative decay pathway is unaffected by the blinking.…”

mentioning

confidence: 99%

Photoinduced blinking in a solid-state quantum system

2017

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Solid-state single-photon emitters (SPEs) are one of the prime components of many quantum nanophotonics devices. In this work, we report on an unusual, photoinduced blinking phenomenon of SPEs in gallium nitride. This is shown to be due to the modification in the transition kinetics of the emitter, via the introduction of additional laser-activated states. We investigate and characterize the blinking effect on the brightness of the source and the statistics of the emitted photons. Combining second-order correlation and fluorescence trajectory measurements, we determine the photodynamics of the trap states and characterize power-dependent decay rates and characteristic "off"-time blinking. Our work sheds light into understanding solid-state quantum system dynamics and, specifically, power-induced blinking phenomena in SPEs. DOI: 10.1103/PhysRevB.96.041203 Fluorescence blinking, also referred to as fluorescence intermittency, is usually an undesired but ubiquitous phenomenon in most quantum light sources, including quantum dots [1][2][3], defects in wide-band-gap semiconductors [4][5][6], and single molecules [7][8][9]. Blinking arises when, upon laser excitation, a fluorescent center undergoes sporadic jumps between "dark" and "bright" states in the photoemission [3]. This phenomenon is identified by the random fall ("off"/"dark" state) and rise ("on"/"bright" state) in photon counts during long-time (milliseconds to hours) fluorescence photostability measurements. Although the cause of the "dark" state has been rigorously studied in various fluorescent systems, a universal physical mechanism that explains blinking has not been pinned down yet [2,[10][11][12][13][14].Recently, a new family of single-photon emitters (SPEs) in gallium nitride (GaN) has been discovered [15]. Using both experimental and modeling techniques, the single-photon emission was attributed to the recombination of localized excitons to a point defect sitting near or inside a cubic inclusion. These emitters show bright, narrow-band emission with linear polarization, which is suitable for quantum information applications. Under continuous-wave laser excitation, the vast majority of the emitters display photostable fluorescent emission with single state photon statistics. Interestingly however, approximately 5% of the emitters start showing blinking once the power of the excitation laser rises over a certain threshold.In this work, we investigate the nature of this excitationinduced blinking behavior of SPEs in GaN at room temperature. Unlike most known SPEs where blinking occurs across all excitation powers without altering its photodynamics, in the present work we report on a previously unexplored behavior where blinking only occurs above a particular excitation threshold and the emitter's photodynamics is permanently altered without bleaching. By combining transition kinetics analysis and fluorescence correlation measurements at short (nanoseconds) and long (millisecond) time scales, we gather insights into the blinking mechanism. Furtherm...

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Narrow-band single-photon emission in the near infrared for quantum key distribution

Cited by 76 publications

References 22 publications

Novel Single Photon Emitters Based on Color Centers in Diamond

Novel Single Photon Emitters Based on Color Centers in Diamond

Fluorescence and Spin Properties of Defects in Single Digit Nanodiamonds

Photoinduced blinking in a solid-state quantum system

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