Nanowires With Promise for Photovoltaics

Borgström, Magnus T.; Wallentin, Jesper; Heurlin, Magnus; Fält, Stefan; Wickert, Peter; Leene, J.; Magnusson, Martin H.; Deppert, Knut; Samuelson, Lars

doi:10.1109/jstqe.2010.2073681

IEEE J. Select. Topics Quantum Electron.

2011

DOI: 10.1109/jstqe.2010.2073681

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Nanowires With Promise for Photovoltaics

Magnus T. Borgström

Jesper Wallentin

Magnus Heurlin

et al.

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Cited by 136 publications

(145 citation statements)

References 92 publications

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“…The ideality factor, n, was around 2.1 at low bias, which is slightly higher than similar InP (Ref. 4) and GaAs (Ref. 30) devices.…”

mentioning

confidence: 60%

“…The currents were significantly higher than in Zn-doped InP NWFETs, 4 which demonstrates better contacts but not necessarily higher doping of the NWs. The gate-sweep measurements showed weak gate dependence but clear p-type behavior.…”

mentioning

confidence: 92%

“…Semiconductor III-V nanowires (NWs) are promising components for optoelectronic devices such as light emitting diodes (LEDs) 1,2 and photovoltaics. [3][4][5][6] The ternary compound Ga x In 1Àx P, for simplicity hereafter referred to as GaInP (InGaP), is a standard part of multijunction solar cells, since it can be grown with a bandgap of around 1.9 eV when lattice-matched to GaAs or Ge. 7 GaInP shells grown on GaAs NW cores have been used for NW-based LEDs on silicon, 8 while others have investigated strained GaInP NW shells 9,34 and molecular beam epitaxy (MBE)-grown GaInP NWs.…”

mentioning

confidence: 99%

“…4 A proper solar cell efficiency could not be calculated since we used a laser for excitation, and since the absorption in nanowires is difficult to evaluate. However, using a simple analysis with a projected absorption area equal to the i-region, we achieve similar efficiencies as previously published single-NW devices.…”

mentioning

confidence: 99%

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Single GaInP nanowire p-i-n junctions near the direct to indirect bandgap crossover point

Wallentin

Barrutia

Jansson

et al. 2012

Applied Physics Letters

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Axially defined GaInP single nanowire (NW) p-i-n junctions are demonstrated, with photocurrent response and yellow-green electroluminescence near the indirect bandgap crossover point at 2.18 eV (569 nm). We use DEZn and H2S as p- and n-type dopants, and find that they both affect the material composition and the crystal structure. The photovoltaic efficiency is comparable to single NW devices from binary III-V materials. These results demonstrate the potential of GaInP nanowires as a high-bandgap material for multijunction solar cells and light-emitting devices in the visible regime.

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“…The ideality factor, n, was around 2.1 at low bias, which is slightly higher than similar InP (Ref. 4) and GaAs (Ref. 30) devices.…”

mentioning

confidence: 60%

mentioning

confidence: 92%

mentioning

confidence: 99%

mentioning

confidence: 99%

See 2 more Smart Citations

Single GaInP nanowire p-i-n junctions near the direct to indirect bandgap crossover point

Wallentin

Barrutia

Jansson

et al. 2012

Applied Physics Letters

Self Cite

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“…It is of course crucial to take into account any e ects from the depletion region formed between the p-type core and n-type shell of the NW, and furthermore, to investigate the possibility that a gradient of the acceptor concentration in the core could potentially give rise to these results. In a previous work 7 , it was shown that the p-type core, grown under nearly identical conditions, exhibited a doping concentration of about 10 18 cm −3 . A core acceptor concentration gradient along the NW axis would give rise to a varying depletion width.…”

mentioning

confidence: 91%

Spatially resolved Hall effect measurement in a single semiconductor nanowire

et al. 2012

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Efficient light-emitting diodes and photovoltaic energy-harvesting devices are expected to play an important role in the continued efforts towards sustainable global power consumption. Semiconductor nanowires are promising candidates as the active components of both light-emitting diodes1, 2, 3, 4, 5, 6 and photovoltaic cells7, 8, 9, 10, primarily due to the added freedom in device design offered by the nanowire geometry. However, for nanowire-based components to move past the proof-of-concept stage and be implemented in production-grade devices, it is necessary to precisely quantify and control fundamental material properties such as doping and carrier mobility. Unfortunately, the nanoscale geometry that makes nanowires interesting for applications also makes them inherently difficult to characterize. Here, we report a method to carry out Hall measurements on single core–shell nanowires. Our technique allows spatially resolved and quantitative determination of the carrier concentration and mobility of the nanowire shell. As Hall measurements have previously been completely unavailable for nanowires, the experimental platform presented here should facilitate the implementation of nanowires in advanced practical devices

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Realization of Wurtzite GaSb Using InAs Nanowire Templates

Namazi

Gren

Nilsson

et al. 2018

Adv Funct Materials

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The crystal structure of a material has a large impact on the electronic and material properties such as band alignment, bandgap energy, and surface energies. Au-seeded III-V nanowires are promising structures for exploring these effects, since for most III-V materials they readily grow in either wurtzite or zinc blende crystal structure. In III-Sb nanowires however, wurtzite crystal structure growth has proven difficult. Therefore, other methods must be developed to achieve wurtzite antimonides. For GaSb, theoretical predictions of the band structure diverge significantly, but the absence of wurtzite GaSb material has prevented any experimental verification of the properties. Having access to this material is a critical step toward clearing the uncertainty in the electronic properties, improving the theoretical band structure models and potentially opening doors toward application of this material. This work demonstrates the use of InAs wurtzite nano wires as templates for realizing GaSb wurtzite shell layers with varying thicknesses. The properties of the axial and radial heterointerfaces are studied at the atomic scale by means of aberration-corrected scanning transmission electron microscopy, revealing their sharpness and structural quality. The transport characterizations point toward a positive offset in the valence band edge of wurtzite compared to zinc blende.

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Nanowires With Promise for Photovoltaics

Cited by 136 publications

References 92 publications

Single GaInP nanowire p-i-n junctions near the direct to indirect bandgap crossover point

Single GaInP nanowire p-i-n junctions near the direct to indirect bandgap crossover point

Spatially resolved Hall effect measurement in a single semiconductor nanowire

Realization of Wurtzite GaSb Using InAs Nanowire Templates

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