Nanowires: Promising Candidates for Electrostatic Control in Future Nanoelectronic Devices

Dura, Julien; Martinie, S.; Munteanu, Daniéla; Triozon, François; Barraud, S.; Niquet, Yann-Michel; Jean-Luc, Autran

doi:10.5772/36692

Cited by 5 publications

(2 citation statements)

References 34 publications

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“…It is observed that the threshold voltage increases with decrease in either the fin width and/or the height, and is due to increase in quantized energies. 15,30 With the increase in V DS , the threshold voltage decreases. However, such reduction is insignificant for smaller fin thickness.…”

Section: Resultsmentioning

confidence: 99%

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Quantum Analytical Modeling of Inversion Charge and Threshold Voltage in Modified Bi-Level FinFET (BL-FinFET)

Saha

Bhowmick

Baishya

2018

ECS J. Solid State Sci. Technol.

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A modified Bi-level FinFET is proposed and its salient features over conventional-FinFET (C-FinFET) are presented. For ultra-thin structure, its working principle incorporating quantum effect was modeled by solving 3D Poisson's and 2D Schrödinger's equation self consistently. 3D Poisson's equation was solved to find the potential distribution in the channel region. Equations for wave function and energy quantization were developed by solving Schrödinger's equation. Using quantized energy level, the expression for the inversion charge in subthreshold region was also developed. Finally, the threshold voltage (V T ) was modeled by equating modeled inversion charge with the threshold charge obtained from TCAD simulator. The effects of device dimensions on threshold voltage were thoroughly studied at various drain bias values. The developed model was validated for Si, Ge, and GaAs channels. Model results verified against ATLAS SILVACO simulator showed very good agreement.

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Section: Resultsmentioning

confidence: 99%

“…In silicon, there are six energy valleys, two are longitudinal and four are transverse. The charge per unit length for each valley can be calculated using the theory of density of states (DOS) as: 15,30,31…”

Section: Analytical Modelingmentioning

confidence: 99%

Quantum Analytical Modeling of Inversion Charge and Threshold Voltage in Modified Bi-Level FinFET (BL-FinFET)

Saha

Bhowmick

Baishya

2018

ECS J. Solid State Sci. Technol.

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Double layer electrostatics of heterogeneous surfaces with circle phase contours

Radoev

Boev

Ivanov

2019

Colloids and Surfaces A: Physicochemical and Engineering Aspect

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Kubo-Greenwood approach for the calculation of mobility in gate-all-around nanowire metal-oxide-semiconductor field-effect transistors including screened remote Coulomb scattering—Comparison with experiment

Dura¹,

Triozon²,

Barraud³

et al. 2012

Journal of Applied Physics

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In this paper, we present a theory of electron mobility in nanowire metal-oxide-semiconductor field-effect transistors (MOSFETs). Numerical approach consists of the Kubo-Greenwood formula and the self-consistent solution of the Schrödinger and Poisson equations for cylindrical gated nanowires. Phonons and surface roughness scatterings are treated in accordance with literature. Moreover, this paper focuses on nanowire MOSFETs using a high-k/metal gate stack. This configuration is chosen to be as close as possible to experimental investigations. The impact of trapped charges in the oxide, called remote Coulomb scattering, is modeled following the Kubo-Greenwood approach and accounting for screening effect. A comparison with experiment is performed for a single cylindrical nanowire with diameter of 20 nm. The diameter dependence is highlighted and it is shown that silicon thickness has a great impact on the mobility for diameters below 10 nm.

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Nanowires: Promising Candidates for Electrostatic Control in Future Nanoelectronic Devices

Cited by 5 publications

References 34 publications

Quantum Analytical Modeling of Inversion Charge and Threshold Voltage in Modified Bi-Level FinFET (BL-FinFET)

Quantum Analytical Modeling of Inversion Charge and Threshold Voltage in Modified Bi-Level FinFET (BL-FinFET)

Double layer electrostatics of heterogeneous surfaces with circle phase contours

Kubo-Greenwood approach for the calculation of mobility in gate-all-around nanowire metal-oxide-semiconductor field-effect transistors including screened remote Coulomb scattering—Comparison with experiment

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