“…For efficient extraction of photogenerated charge carriers, the electrical design needs to be carefully optimized (see Figure 1b for an example of an axial p-i-n junction in a nanowire, with transparent conductive oxide (TCO) as top contact). However, this review focuses on the absorption of light, and we kindly refer the readers to other works for the electrical design of solar cells and photodetectors [14][15][16][17][18][19]. We wish, however, to mention that in solar cells, the photogenerated carriers must be extracted with a simultaneous voltage bias created by the solar cell itself, in order to give rise to a net electrical power output from the solar cell [14,15] (see Figure 1c).…”
Vertical III-V semiconductor nanowires have shown promising absorption of light for solar cell and photodetector applications. The absorption properties can be tuned through the choice of III-V materials and geometry of the nanowires. Here, we review the recent progress in the design of the absorption properties of both individual nanowires and nanowire arrays. Future directions for the research field are proposed.
“…For efficient extraction of photogenerated charge carriers, the electrical design needs to be carefully optimized (see Figure 1b for an example of an axial p-i-n junction in a nanowire, with transparent conductive oxide (TCO) as top contact). However, this review focuses on the absorption of light, and we kindly refer the readers to other works for the electrical design of solar cells and photodetectors [14][15][16][17][18][19]. We wish, however, to mention that in solar cells, the photogenerated carriers must be extracted with a simultaneous voltage bias created by the solar cell itself, in order to give rise to a net electrical power output from the solar cell [14,15] (see Figure 1c).…”
Vertical III-V semiconductor nanowires have shown promising absorption of light for solar cell and photodetector applications. The absorption properties can be tuned through the choice of III-V materials and geometry of the nanowires. Here, we review the recent progress in the design of the absorption properties of both individual nanowires and nanowire arrays. Future directions for the research field are proposed.
Vertical III-V semiconductor nanowires have shown promising absorption of light for solar cell and photodetector applications. The absorption properties can be tuned through the choice of III-V materials and geometry of the nanowires. Here, we review recent progress in the design of the absorption properties of both individual nanowires and nanowire arrays. Future directions for the research field are proposed.
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