2014
DOI: 10.1063/1.4897543
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Nanowire terahertz quantum cascade lasers

Abstract: Quantum cascade lasers made of nanowire axial heterostructures are proposed. The dissipative quantum dynamics of their carriers is theoretically investigated using non-equilibrium Green functions. Their transport and gain properties are calculated for varying nanowire thickness, from the classical-wire regime to the quantum-wire regime. Our calculation shows that the lateral quantum confinement provided by the nanowires allows an increase of the maximum operation temperature and a strong reduction of the curre… Show more

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Cited by 25 publications
(19 citation statements)
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References 35 publications
(41 reference statements)
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“…A similar current instability was predicted in Ref. [28], where the possibility of doubling all barrier thicknesses was explored. In our two-well design, where the radiative transition is diagonal, it is clearly disadvantageous to increase the radiative barrier, but, for example, doubling only the injector barrier thickness from 3.7 to 7.4 nm reduces the injection coupling from 1.9 to 0.3 meV and the parasitic coupling from 0.875 to 0.2 meV.…”
Section: F Parasitic Tunnelingmentioning
confidence: 67%
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“…A similar current instability was predicted in Ref. [28], where the possibility of doubling all barrier thicknesses was explored. In our two-well design, where the radiative transition is diagonal, it is clearly disadvantageous to increase the radiative barrier, but, for example, doubling only the injector barrier thickness from 3.7 to 7.4 nm reduces the injection coupling from 1.9 to 0.3 meV and the parasitic coupling from 0.875 to 0.2 meV.…”
Section: F Parasitic Tunnelingmentioning
confidence: 67%
“…[26][27][28][29]. In these works, the electron-phonon interaction is accounted for by a phonon Greens function which enters into the electron self-energy; it is therefore represented as an average field which is assumed to remain at thermal equilibrium.…”
Section: Electron-lo-phonon Couplingmentioning
confidence: 99%
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“…Semiconductor nanowires (NWs) have already demonstrated a wide range of promising applications in optoelectronics, electronics, sensing, energy, etc. There is an interest in NWs to improve the performance of intersubband (ISB) devices motivated by: Their low electrical cross‐section implies low electrical capacitance, thus a larger operation bandwidth than planar devices. Owing to antenna effects, this comes without degradation of light absorption.…”
Section: Introductionmentioning
confidence: 99%
“…In addition to QDs, nanowires have also been studied in this context theoretically recently [13,14]. Early proposals with QDs [15] involved transitions between QDs in different layers, but the idea of using transitions inside a single QD was already suggested in Reference [16].…”
Section: Introductionmentioning
confidence: 99%