Nanowire-based very-high-frequency electromechanical resonator

Husain, A.; Hone, James; Postma, Henk W. Ch.; Huang, Xiaoping; Drake, T. S.; Barbic, Mladen; Scherer, Axel; Roukes, M. L.

doi:10.1063/1.1601311

Cited by 322 publications

(252 citation statements)

References 16 publications

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“…For instance, a suspended nanomechanical beam [25,26] which is excited to transverse vibrations behaves as a damped anharmonic resonator. Several experimental groups have observed the behavior described by the classical Duffing oscillator [27,28,29,30]. The transition to the quantum regime is currently in the focus of intense research [31,32,33,34,35,36].…”

Section: Discussionmentioning

confidence: 99%

Dynamics of the quantum Duffing oscillator in the driving induced bistable regime

Peano

Thorwart

2006

Chemical Physics

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We investigate the nonlinear response of an anharmonic monostable quantum mechanical resonator to strong external periodic driving. The driving thereby induces an effective bistability in which resonant tunneling can be identified. Within the framework of a Floquet analysis, an effective Floquet-Born-Markovian master equation with time-independent coefficients can be established which can be solved straightforwardly. Various effects including resonant tunneling and multi-photon transitions will be described. Our model finds applications in nano-electromechanical devices such as vibrating suspended nano-wires as well as in non-destructive readout procedures for superconducting quantum bits involving the nonlinear response of the read-out SQUID.

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Section: Discussionmentioning

confidence: 99%

Dynamics of the quantum Duffing oscillator in the driving induced bistable regime

Peano

Thorwart

2006

Chemical Physics

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“…This could be implemented by placing a rigid electrically charged base elec- Figure 8.1 A 43 nanometer thick doubly-clamped platinum nanowire with an external electrode that can be used to tune its natural frequency as well as its nonlinear properties. Adapted with permission from [33].…”

Section: Nonlinearities Arising From External Potentialsmentioning

confidence: 99%

Nonlinear Dynamics of Nanomechanical Resonators

Lifshitz

Cross

2010

Nonlinear Dynamics of Nanosystems

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“…This differs significantly from previous NW-(ref. 17) and nanotube-based NEMS (ref. 18) that use a thin evaporated top metal as a mechanical anchor and are released by selective wet etching of an underlying SiO 2 layer.…”

mentioning

confidence: 99%

Bottom-up assembly of large-area nanowire resonator arrays

et al. 2008

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Directed-assembly of nanowire-based devices 1 will enable the development of integrated circuits with new functions that extend well beyond mainstream digital logic. For example, nanoelectromechanical resonators are very attractive for chip-based sensor arrays 2 because of their potential for ultrasensitive mass detection 3-6 . In this letter, we introduce a new bottom-up assembly method to fabricate large-area nanoelectromechanical arrays each having over 2,000 single-nanowire resonators. The nanowires are synthesized and chemically functionalized before they are integrated onto a silicon chip at predetermined locations. Peptide nucleic acid probe molecules attached to the nanowires before assembly maintain their binding selectivity and recognize complementary oligonucleotide targets once the resonator array is assembled. The two types of cantilevered resonators we integrated here using silicon and rhodium nanowires had Q-factors of ~4,500 and 1,150, respectively, in vacuum. Taken together, these results show that bottom-up nanowire assembly can offer a practical alternative to top-down fabrication for sensitive chip-based detection.Our hybrid nanoelectromechanical systems (NEMS) array integration strategy combines deterministic bottom-up nanowire (NW) assembly with conventional top-down microfabrication as illustrated in Fig. 1. Here we show the flexibility of this approach by fabricating resonators using two types of NWs-semiconducting silicon (Si) or metallic rhodium (Rh)-synthesized off-chip with different growth methods. The SiNWs grown by the Au-catalysed vapour-liquid-solid (VLS) technique are predominately single-crystal and oriented in the 〈111〉 or 〈112〉 growth directions 7 . In contrast, RhNWs electrodeposited within the pores of anodic aluminium oxide membranes are polycrystalline, with an average grain size of 5 nm (ref. 8). This assembly method is quite general and can be extended to many other NW materials 1,9 (for example, multisegment metal, magnetic, oxide or piezoelectric materials) and geometries 10 (for example, hollow tube or flat belt).Correspondence and requests for materials should be addressed to R.B.B. and T.S.M. † These authors contributed equally to this work. Bottom-up assembly is used to position single NWs at lithographically defined locations on a Si chip for fabricating multiplexed arrays. Unlike earlier reports of NW assembly 11-15 , three separate mechanisms are combined to achieve high-yield NW integration over centimetre-scale chip areas: electric-field forces, capillary forces and NW lift-off. As illustrated in Fig. 1, we patterned arrays of wells in a sacrificial insulating photoresist layer covering metal guiding electrodes defined on the chip surface. An alternating voltage in the kilohertz range was applied between the guiding electrodes to produce spatially confined electric fields that polarize NWs in suspension 11 . Long-range dielectrophoretic forces attract the NWs to the surface and align them along the electric-field gradient. Single NWs are further centr...

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Nanowire-based very-high-frequency electromechanical resonator

Cited by 322 publications

References 16 publications

Dynamics of the quantum Duffing oscillator in the driving induced bistable regime

Dynamics of the quantum Duffing oscillator in the driving induced bistable regime

Nonlinear Dynamics of Nanomechanical Resonators

Bottom-up assembly of large-area nanowire resonator arrays

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