Nanostructures/Graphene/Silicon Junction‐Based High‐Performance Photodetection Systems: Progress, Challenges, and Future Trends

Abstract

Graphene, due to its exceptional optoelectronic characteristics, high charge carrier mobility, wide absorption band, strong light‐matter interactions, and its adjustable nature, has attracted a lot of interest. In light of this, an attempt was made to successfully deposit graphene on a silicon substrate. This results in the formation of a Schottky junction, which could extend the operation window of the graphene/silicon hybrid device to the near‐infrared (NIR) region. Furthermore, since photodetectors built with Van der Waal heterostructures successfully extend the lifespan of dynamic charge carriers with improved the transportation range and speed of charge separation for effective photodetection, the technical development of optoelectronic devices has been greatly accelerated. Recent developments in graphene‐silicon junction‐based devices, their photodetection effectiveness, and active factors that can be used in a variety of applications are outlined, including optical synaptic systems, optical spectrometers, plasmonic devices, optical waveguides, and ultrafast photodetectors. Moreover, the shortcomings of the present optoelectronic devices are also concisely reviewed, along with the viable solutions offered by this new device and its application in next‐generation devices.

Advances in solar energy harvesting integrated by van der Waals graphene heterojunctions

“…11 It comprises a monolayer of carbon atoms arranged in a hexagon network. 7,18–42 Thus, graphene has been shown as a greatly promising material for future optoelectronic devices due to its remarkable features, including high mobility reaching up to 10 4 cm 2 V −1 s −1 at ambient temperature, exceptional thermal and electric conductivities, and ballistic transport. 12,43 Also, in the broad spectra range of visible and near-infrared (NIR), the transmittance of single layer graphene can reach 97.7%, and only 2.3% of the light intensity can be absorbed.…”

Review of Luminescence-Based Light Spectrum Modifications Methods and Materials for Photovoltaics Applications

“…Quantum dot (QDs) materials are widely known, and are often referred to as suitable candidates for light conversion applications typical from the UV to the visible region [93], and also in photodetectors [94,95] Owing to the high density of states, their potential conversion efficiency may surpass the values of other materials [30]. The most notable advantages of QDs are based on their high absorption coefficient and high probability of radiative emission, mainly resulting from the existence of intraband discrete energy levels.…”

Highly efficient SnS-based inverted planar heterojunction solar cell with ZnO ETL

“…The most popular form of renewable energy is solar energy among various renewable energy sources [1,2]. In recent years, many researchers have proposed different light harvesting materials for solar cell applications [3][4][5][6][7][8][9][10][11][12][13]. Generally, the most efficient solar cells are based on Si, GaAs, etc [14][15][16].…”