2019
DOI: 10.1039/c9tc04489b
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Nanostructured tungsten oxide thin film devices: from optoelectronics and ionics to iontronics

Abstract: Recent progress of nanostructured tungsten oxide thin film devices is reviewed from optoelectronics and ionics to iontronics with their development trends, challenges, and opportunities analyzed and proposed.

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Cited by 56 publications
(36 citation statements)
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“…Tungsten oxide (WO 3 ) is a typical n-type metal oxide semiconductor with a tunable optical bandgap in the range of 2.5 -3.2 eV [1,2]. Moreover, WO 3 is stable in both acid and base environment, harmless to humans, abundant in the Earth, and especially has the electrochromic property [1,2].…”
Section: Introductionmentioning
confidence: 99%
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“…Tungsten oxide (WO 3 ) is a typical n-type metal oxide semiconductor with a tunable optical bandgap in the range of 2.5 -3.2 eV [1,2]. Moreover, WO 3 is stable in both acid and base environment, harmless to humans, abundant in the Earth, and especially has the electrochromic property [1,2].…”
Section: Introductionmentioning
confidence: 99%
“…Tungsten oxide (WO 3 ) is a typical n-type metal oxide semiconductor with a tunable optical bandgap in the range of 2.5 -3.2 eV [1,2]. Moreover, WO 3 is stable in both acid and base environment, harmless to humans, abundant in the Earth, and especially has the electrochromic property [1,2]. These properties have made WO 3 become one of the most studied metal oxides for various applications such as gas sensors [3], photocatalysis [4], and smart window applications [5].…”
Section: Introductionmentioning
confidence: 99%
See 3 more Smart Citations