2019
DOI: 10.1039/c9ta03967h
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Nanostructured SnSe integrated with Se quantum dots with ultrahigh power factor and thermoelectric performance from magnetic field-assisted hydrothermal synthesis

Abstract: Through magnetic field-assisted hydrothermal synthesis, high thermoelectric performance of SnSe is obtained due to Se quantum dots and smaller nano grains, leading to enhanced density of states and energy filtering effect.

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Cited by 50 publications
(29 citation statements)
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“…A summary of ZTs for SnSe‐based thermoelectric materials. a) The timeline for state‐of‐the‐art SnSe bulks thermoelectric materials,11–124,169–182 the performance achieved by solution route are circled by yellow. b) Temperature‐dependent ZT and c) corresponding peak and average ZT values for polycrystalline SnSe through different fabrication techniques 13,16,22,46,58,62,95,99,101.…”
Section: Introductionmentioning
confidence: 99%
“…A summary of ZTs for SnSe‐based thermoelectric materials. a) The timeline for state‐of‐the‐art SnSe bulks thermoelectric materials,11–124,169–182 the performance achieved by solution route are circled by yellow. b) Temperature‐dependent ZT and c) corresponding peak and average ZT values for polycrystalline SnSe through different fabrication techniques 13,16,22,46,58,62,95,99,101.…”
Section: Introductionmentioning
confidence: 99%
“…The Ge QDs are uniformly distributed in the matrix of SiGeSn film, and the precipitated Sn particles are also intermixed in the matrix as shown in Figure 1 and Figure S1 in the Supporting Information. Here, the Sn particles with uniform distribution and moderate size furnish more charge carriers to enhance electrical conductivity through modulation doping effect, [28,29] meanwhile the high-density QDs act as charge traps to filter low energy electrons to markedly improve S by the energy filtering effect [30,31] as schematically demonstrated in Figure 1. With our specially constructed hybrid QDs film structure, we obtain n-type TE films where the PF reaches as high as 91 µW cm −1 K −2 leading to a ZT value of 0.8 @300 K. The giant power factor is a champion value achieved @300 K, for any n-type thermoelectric thin film.…”
Section: Introductionmentioning
confidence: 99%
“…For semiconductor thermoelectric materials, the introduction of small quantities of impurity (element doping) during the bottom-up preparation can not only tailor the carrier concentration and/or mobility to optimize the σ, but also induce point defects (vacancies or self-interstitials) and adjust the microstructures (e.g., phase separation, formation of nanoscaled precipitates or ultra-fine grains) to reduce the κ L [211][212][213][214][215][216][217][218][219][220]. Although the carrier concentration in a material can be modulated using defect-engineering, or stoichiometry control during synthesis, reaching the optimized carrier concentration (typically 10 19 cm −3 ) often require additional extrinsic doping.…”
Section: Nanoscale Doping In Bottom-up Processmentioning
confidence: 99%