2016
DOI: 10.1039/c6mh00049e
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Nanostructured materials for non-volatile organic transistor memory applications

Abstract: Over the past decades, the demand for organic memory has rapidly increased due to the development of flexible electronics.

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Cited by 108 publications
(90 citation statements)
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“…Transistor‐type nonvolatile memories have received extensive attention on account of their nondestructive read‐out, single transistor architecture and compatibility with complementary integrated circuits . One common class is floating‐gate flash memory which consists of gate electrode, blocking dielectric (prevent charge transport between gate electrode and floating gate), floating gate (store charges), tunneling layer (determine program/erase speed and prevent leakage of trapped carriers), semiconducting active layer and source/drain electrodes.…”
Section: Functional Applications Of Ambipolar Transistorsmentioning
confidence: 99%
“…Transistor‐type nonvolatile memories have received extensive attention on account of their nondestructive read‐out, single transistor architecture and compatibility with complementary integrated circuits . One common class is floating‐gate flash memory which consists of gate electrode, blocking dielectric (prevent charge transport between gate electrode and floating gate), floating gate (store charges), tunneling layer (determine program/erase speed and prevent leakage of trapped carriers), semiconducting active layer and source/drain electrodes.…”
Section: Functional Applications Of Ambipolar Transistorsmentioning
confidence: 99%
“…One of the widely used strategies is to integrate multicomponents inside active materials so as to combine varied electronic and optoelectronic functions to work synergistically. As a result, a variety of organic devices based on these multicomponent active materials have been developed, including ambipolar organic field‐effect transistors (OFETs), organic light‐emitting diodes (OLEDs) and organic light‐emitting transistors (OLETs), organic photovoltaics (OPVs), memory devices, and complementary circuits . However, integrating multicomponents together often ends up with relatively disordered molecular packing in amorphous or polycrystalline states, leading to moderate performance.…”
Section: Introductionmentioning
confidence: 99%
“…To date, versatile solution‐processable photoactive materials showing intense light absorption in the wavelengths ranging from ultraviolet to the near‐infrared region have been exploited in electronic devices to enable a photon‐recording functionality . Among which, the transistor‐type memory using a floating‐gate architecture has been considered as a promising platform to realize long retention times over several years, because the spatially‐confined metallic or semiconducting floating‐gate elements act as a charge‐trapping site to electrically isolate the trapped charges from the surrounding insulator effectively . Based on similar principle, it is feasible to create charge trapping/storing by using photons instead of an electrical field.…”
mentioning
confidence: 99%