Nanostructured Crystals:  Unique Hybrid Semiconductors Exhibiting Nearly Zero and Tunable Uniaxial Thermal Expansion Behavior

Abstract

A unique family of II−VI based nanostructured inorganic−organic hybrid semiconductors exhibit nearly zero uniaxial thermal expansion in the temperature range of 95−295 K. Both their optoelectronic and thermal expansion properties are systematically tunable. The diamine molecules show a strong negative thermal expansion effect, and the extent of such an effect increases as the length of the organic molecules increases.

Synthesis and characterization of inorganic‐organic ZnS(aminopropane)n composite materials

“…Similar structures have been previously described by group of J. Li [9][10][11]. The space group Cmc2 1 is characteristic for compounds built on the basis of amines with an odd number of carbon atoms in the case of amines with even number of C atoms, Pbca is typical space group [18]. The SEM image of ZnS(1,3-dap) 1/2 (Fig.…”

Inorganic–Organic Hybrid Surfactant Crystals: Structural Aspects and Functions

“…Metal halide infinite layers and chalcogenide molecular clusters comprise heavier and more polarizable atoms (S, Cl, Se, Br, and I), and exhibit characteristic electronic property owing to their polymeric structures such as semiconductivity [13,16,[82][83][84][85][91][92][93][94] or photoluminescence [13,16,85,90]. Surfactant hybrid crystals composed from these metal halide and chalcogenide polymeric anions can be applicable to dye-sensitized solar cells [95,96] and electronic devices [97].…”

Adjustable Zero Thermal Expansion in Antiperovskite Manganese Nitride

“…In most cases ZTE materials are based on a composite, combining positive thermal expansion (PTE) and negative thermal expansion (NTE) behavior. [6][7][8][9][10] In addition to the Invar effect in Fe-Ni alloys, [ 11 ] ZTE in a single material has, to date, only been documented in a small number of compounds such as YbGaGe, [ 2 ] Mn 3 AN (A = Cu/Sn, Zn/Sn), [ 12 ] Fe[Co(CN) 6 ], [ 13 ] and N(CH 3 ) 4 CuZn(CN) 4 . [ 14 ] Among the candidates for ZTE materials, the antiperovskite manganese nitrides are prominent, due to their special spectrum of properties including ZTE isotropy, [ 12 ] electric conductivity, [ 15 ] and good mechanical performance.…”