Nanostructured broadband antireflection coatings on AlInP fabricated by nanoimprint lithography

Moth eye antireflection coated GaInP/GaAs/GaInNAs solar cell

“…However, based on PC1D simulations with different AlInP window thicknesses, we did not see remarkable differences even when a recombination velocity as high as 10 7 cm/s was considered instead of more typical 10 4 cm/s to 10 5 cm/s rates [15]. We believe that the most of the losses are caused by the absorption losses of AlInP [3]. Therefore, for future developments the AlInP layer thickness should be optimized to maximize the current generation in the top junction.…”

“…One possible reason for the decreased performance of the GaInP cell at short wavelength, besides the absorption losses, could be the difference in surface recombination rate at AlInP surface. Based on the geometry, we estimate that the surface area of the moth eye structure is approximately three times larger than that for the TiO 2 /SiO 2 reference structure [3]. However, based on PC1D simulations with different AlInP window thicknesses, we did not see remarkable differences even when a recombination velocity as high as 10 7 cm/s was considered instead of more typical 10 4 cm/s to 10 5 cm/s rates [15].…”

“…The advantageous features of such nanostructures fabricated in AlInP, which is typically used as a window layer on GaAs based MJSCs, have been already demonstrated [3,4]. Moreover, we have also demonstrated a moth eye ARC fabricated on top of a single junction dilute nitride solar cell with a bandgap (E g ) of 1 eV [4].…”

“…The reference sample was e-beam coated with a TiO 2 /SiO 2 ARC. Details of the MJSC growth and the moth eye ARC fabrication have been reported elsewhere [3,4,13]. Ni/Ge/Au contact fingers and the Ti/Au back contact were deposited by e-beam evaporation on the n-side and p-side, respectively.…”

Enhancing the chroma of pigmented polymers using antireflective surface structures

“…The structures can, when employed on optical components such as lenses, greatly reduce the surface reflections [2][3][4]. Also within silicon [5][6][7] and III-V [8,9] technologies ARS are used, e.g., for increasing the efficiency of photovoltaic devices.…”