Nanostructure stabilization by low-temperature dopant pinning in multiferroic BiFeO<sub>3</sub>-based thin films produced by aqueous chemical solution deposition

Gumiel, Carlos; Jardiel, Teresa; Calatayud, David G.; Vranken, Thomas; Bael, Marlies K. Van; Hardy, An; Calzada, M. L.; Jiménez, Ricardo; Garcı́a-Hernández, M.; Mompeán, F. J.; Caballero, A. C.; Peiteado, M.

doi:10.1039/c9tc05912a

Cited by 13 publications

(3 citation statements)

References 61 publications

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“…Hardy and co-workers have prepared ferroelectric oxide films by an aqueous solution method. [102][103][104][105] In comparison, the alcohol salt method is more common. The alcohol salt method is usually based on metal-organic alcohol salts as raw materials.…”

Section: Sol-gelmentioning

confidence: 99%

Perovskite Oxide Ferroelectric Thin Films

Tian

Yang

2022

Adv Elect Materials

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be roughly divided into perovskite-type, lithium niobate type, tungsten bronze type, potassium dihydrogen phosphate type, triglycine sulphate type, Rochelle salt, ferroelectric liquid crystal, and ferroelectric polymer. Among these ferroelectric thin film materials, perovskite ferroelectric films and ferroelectric polymer films are relatively well-studied films. The outstanding ductility and flexibility of ferroelectric polymer films like polyvinylidene fluoride (PVDF) have made them popular in flexible electrical devices. [7][8][9] However, some disadvantages of ferroelectric polymer films, such as low polarization strength, large coercive field, slow switching speed, and poor temperature resistance limit their application in fields including ferroelectric memory, piezoelectric energy harvesting or sensors. [10][11][12] To apply them to these fields, they need to be appropriately combined with perovskite oxide materials to improve their ferroelectric properties. For example, some researchers doped 0.5((Ba 0.7 Ca 0.3 )TiO 3 )-0.5(Ba(Zr 0.2 Ti 0.8 ) O 3 ) (BCZT) ceramic particles into PVDF to make BCZT/PVDF composite film. PVDF is a semicrystalline ferroelectric polymer, doping it with BCZT improves its crystallinity and hence its dielectric constant. The dielectric constants of the γ-PVDF phase and α-PVDF phase in pure PVDF films are ≈10 and 7.5. After doping with BCZT, the dielectric constants increase to 31 and 20, which improves the ferroelectric properties of PVDF. [13] There are many other examples of enhancing the ferroelectric properties of PVDF films by doping with perovskite oxides. [14][15][16][17][18][19][20] Obviously, enhancing the ferroelectric properties of PVDF by this method will make the preparation process relatively tedious and is not conducive to mass production. It is not as convenient as growing perovskite ferroelectric films directly on flexible substrates. In addition, polymers' poor temperature resistance limits their utilization compared to ferroelectric oxide thin film materials' superior temperature resistance and physical properties. The composite dielectric film composed of BiFeO 3 (BFO) and SrTiO 3 (STO) has a reversible energy storage density (U e ) of about 70 J cm −3 at room temperature and can operate stably between −60 and 100 °C. [21] BaZr 0.35 Ti 0.65 O 3 (BZT) has a U e of 78.7 J cm −3 at room temperature and can work stably between −150 and 200 °C, and the U e still exceeds 40 J cm −3 at 200 °C. [22] But polymer-based ferroelectric materials often cannot be applied at high temperatures and have a low energy storage density (<40 J cm −3 ). [23,24] The high temperature special design can meet the temperature requirements, but the dielectric properties need more optimization. [25,26] The spontaneous polarization of BaTiO 3 (BTO) is about 25 µC cm −2 , [27] and the spontaneous polarization of stress-modulated BTO Perovskite oxide thin film materials are used in various fields of human life due to their excellent physical properties. The high performance thin films in turn prov...

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Section: Sol-gelmentioning

confidence: 99%

Perovskite Oxide Ferroelectric Thin Films

Tian

Yang

2022

Adv Elect Materials

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“…Chemical doping can also be used to induce metastable structural state observed for the compounds in the vicinity of the structural phase transitions and characterized by an increased sensitivity to the external stimuli as temperature, pressure, electric and magnetic field etc. [19][20][21].…”

Section: Introductionmentioning

confidence: 99%

Evolution of the crystal structure and magnetic properties of Sm-doped BiFeO3 ceramics across the phase boundary region

Karpinsky¹,

Pakalniškis

Niaura

et al. 2021

Ceramics International

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“…As a result, a large number of oxygen vacancies or other defects often exist in the prepared BiFeO 3 samples, which increases the leakage current density of BiFeO 3 materials and adversely affects its performance [ 14 ]. There are many ways to improve the properties of BiFeO 3 materials, including element doping, solid solution, formation of a heterostructure, and control of film orientation [ 15 , 16 , 17 , 18 ]. Among them, many researchers adopt the element doping method to improve the performance of BiFeO 3 materials [ 19 , 20 , 21 , 22 ].…”

Section: Introductionmentioning

confidence: 99%

Phase Structure and Electrical Properties of Sm-Doped BiFe0.98Mn0.02O3 Thin Films

Wang

et al. 2021

Nanomaterials

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Bi1−xSmxFe0.98Mn0.02O3 (x = 0, 0.02, 0.04, 0.06; named BSFMx) (BSFM) films were prepared by the sol-gel method on indium tin oxide (ITO)/glass substrate. The effects of different Sm content on the crystal structure, phase composition, oxygen vacancy content, ferroelectric property, dielectric property, leakage property, leakage mechanism, and aging property of the BSFM films were systematically analyzed. X-ray diffraction (XRD) and Raman spectral analyses revealed that the sample had both R3c and Pnma phases. Through additional XRD fitting of the films, the content of the two phases of the sample was analyzed in detail, and it was found that the Pnma phase in the BSFMx = 0 film had the lowest abundance. X-ray photoelectron spectroscopy (XPS) analysis showed that the BSFMx = 0.04 film had the lowest oxygen vacancy content, which was conducive to a decrease in leakage current density and an improvement in dielectric properties. The diffraction peak of (110) exhibited the maximum intensity when the doping amount was 4 mol%, and the minimum leakage current density and a large remanent polarization intensity were also observed at room temperature (2Pr = 91.859 μC/cm2). By doping Sm at an appropriate amount, the leakage property of the BSFM films was reduced, the dielectric property was improved, and the aging process was delayed. The performance changes in the BSFM films were further explained from different perspectives, such as phase composition and oxygen vacancy content.

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Nanostructure stabilization by low-temperature dopant pinning in multiferroic BiFeO₃-based thin films produced by aqueous chemical solution deposition

Abstract: BiFeO3 single-phase thin films with an effective and tuneable multiferroic response are obtained in aqueous media by using mild processing conditions.

Cited by 13 publications

References 61 publications

Perovskite Oxide Ferroelectric Thin Films

Perovskite Oxide Ferroelectric Thin Films

Evolution of the crystal structure and magnetic properties of Sm-doped BiFeO3 ceramics across the phase boundary region

Phase Structure and Electrical Properties of Sm-Doped BiFe0.98Mn0.02O3 Thin Films

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Nanostructure stabilization by low-temperature dopant pinning in multiferroic BiFeO3-based thin films produced by aqueous chemical solution deposition

Abstract: BiFeO3 single-phase thin films with an effective and tuneable multiferroic response are obtained in aqueous media by using mild processing conditions.

Cited by 13 publications

References 61 publications

Perovskite Oxide Ferroelectric Thin Films

Perovskite Oxide Ferroelectric Thin Films

Evolution of the crystal structure and magnetic properties of Sm-doped BiFeO3 ceramics across the phase boundary region

Phase Structure and Electrical Properties of Sm-Doped BiFe0.98Mn0.02O3 Thin Films

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Nanostructure stabilization by low-temperature dopant pinning in multiferroic BiFeO₃-based thin films produced by aqueous chemical solution deposition