Nanosphere lithography for device fabrication

Abstract

An inexpensive and scalable technique enables tailoring of nanopatterns and nanostructures on solid surfaces.

Ar+ ion irradiation-induced reorganization of colloidal silica nanoparticles in Langmuir–Blodgett monolayers

“…9 for small inter-particle distances reaches ~ 40 nm at the maximum, being comparable to the results of Lindner et al [11] and Nagy et al [7].…”

“…The ion irradiation of a nanoparticulate mask causes the reorganization of particles with different features of the process for low, medium and high ion fluences [16,17]. In this paper we show that the reorganization process also depends on the particle size.…”

“…Above the fluence of 510 16 cm -2 , further decrease of the particle diameter to  420 nm, and increase of the size of defect-channels with the change of morphology can be observed (Figs. 8b(i,ii)).…”

“…The physical parameters playing crucial role in such effects are ion energy, ion mass, particle size and shape, particle-particle distance and the initial self-organization of particles in the LB monolayer [5,6]. So far low mass ions like He + [11], medium mass ions like Ar + or Ga + [5,6], and heavy ions like Xe + [12,13], Xe 2+ [7,14] or Xe 4+ [15] have been used for the irradiation of various materials and study of the above mentioned phenomena.…”

“…7 and 8 reveal swelling spikes and interconnected rims. The spikes emerge between free adjacent particles which are interconnected by necks thus forming a triangular "bridge" [7,11]. This triangular "bridge" also acts as mask and prevents the underlying Si surface from significant swelling.…”