Nanosheet field effect transistors-A next generation device to keep Moore's law alive: An intensive study

Ajayan, J.; Nirmal, D.; Tayal, Shubham; Bhattacharya, Sandip; Arivazhagan, L.; Fletcher, A.S. Augustine; Murugapandiyan, P.; Ajitha, D.

doi:10.1016/j.mejo.2021.105141

Cited by 58 publications

(14 citation statements)

References 53 publications

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“…Over the past few decades, the information-technology market has grown rapidly, largely because the performance of computing systems has improved significantly over time due to Moore’s law [ 1 , 2 , 3 , 4 ]. Big-data processing is considered a new benchmark in addition to performance, which is of great importance in applications such as the Internet of Things (IoT), autonomous vehicles, and adaptive control and management systems [ 5 , 6 ].…”

Section: Introductionmentioning

confidence: 99%

Nanoscale-Resistive Switching in Forming-Free Zinc Oxide Memristive Structures

et al. 2022

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This article presents the results of experimental studies of the impact of electrode material and the effect of nanoscale film thickness on the resistive switching in forming-free nanocrystalline ZnO films grown by pulsed laser deposition. It was demonstrated that the nanocrystalline ZnO film with TiN, Pt, ZnO:In, and ZnO:Pd bottom electrodes exhibits a nonlinear bipolar effect of forming-free resistive switching. The sample with Pt showed the highest resistance values RHRS and RLRS and the highest value of Uset = 2.7 ± 0.4 V. The samples with the ZnO:In and ZnO:Pd bottom electrode showed the lowest Uset and Ures values. An increase in the number of laser pulses from 1000 to 5000 was shown to lead to an increase in the thickness of the nanocrystalline ZnO film from 7.2 ± 2.5 nm to 53.6 ± 18.3 nm. The dependence of electrophysical parameters (electron concentration, electron mobility, and resistivity) on the thickness of the forming-free nanocrystalline ZnO film for the TiN/ZnO/W structure was investigated. The endurance test and homogeneity test for TiN/ZnO/W structures were performed. The structure Al2O3/TiN/ZnO/W with a nanocrystalline ZnO thickness 41.2 ± 9.7 nm was shown to be preferable for the manufacture of ReRAM and memristive neuromorphic systems due to the highest value of RHRS/RLRS = 2307.8 ± 166.4 and low values of Uset = 1.9 ± 0.2 V and Ures = −1.3 ± 0.5 V. It was demonstrated that the use of the TiN top electrode in the Al2O3/TiN/ZnO memristor structure allowed for the reduction in Uset and Ures and the increase in the RHRS/RLRS ratio. The results obtained can be used in the manufacturing of resistive-switching nanoscale devices for neuromorphic computing based on the forming-free nanocrystalline ZnO oxide films.

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Section: Introductionmentioning

confidence: 99%

Nanoscale-Resistive Switching in Forming-Free Zinc Oxide Memristive Structures

et al. 2022

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“…[432] Researchers have been trying to increase this bandwidth (the pathway between the two systems) by increasing the number of transistors on a chip (following Moore's law); however, the ability to compact more transistors together without losing functionality due to massive heat generation is beginning to slow down as processing nodes decrease past 2-3 nm. [433][434][435] Another approach researchers have taken to mitigate the von Neumann bottleneck is to safely parallelizing data flow between the CPU and memory-like how the brain accesses information using multiple neurons at the same time without any interference. [436] By parallelizing the CPU's data access, one can transfer more information (using the same transfer rate per bandwidth) in the same amount of time.…”

Section: Time Delay In Feedback Sensorsmentioning

confidence: 99%

Section: Communicationmentioning

confidence: 99%

Flexible Electronics and Devices as Human–Machine Interfaces for Medical Robotics

2022

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Medical robots are invaluable players in non-pharmaceutical treatment of disabilities. Particularly, using prosthetic and rehabilitation devices with human-machine interfaces can greatly improve the quality of life for impaired patients. In recent years, flexible electronic interfaces and soft robotics have attracted tremendous attention in this field due to their high biocompatibility, functionality, conformability, and low-cost. Flexible human-machine interfaces on soft robotics would make a promising alternative to conventional rigid devices, which could potentially revolutionize the paradigm and future direction of medical robotics in terms of rehabilitation feedback and user experience. In this review, the fundamental components of the materials, structures, and mechanisms in flexible humanmachine interfaces are summarized by recent and renown applications in five primary areas: physical and chemical sensing, physiological recording, information processing and communication, soft robotic actuation, and feedback stimulation. This review further concludes by discussing the outlook and current challenges of these technologies as a human-machine interface in medical robotics.

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“…[9][10][11] Recently, the technology node of 7 nm has been mass-produced, and researchers are currently working to develop ICs for the technology nodes of 5 nm and 3 nm. [12][13][14] Traditional silicon manufacturing for IC processing uses ''topdown'' approaches including ultraviolet (UV), deep ultraviolet (DUV), 13.5 nm extreme ultraviolet (EUV) lithography and nanoimprint lithography (NIL), [15][16][17][18][19][20][21] which are executed by a lengthy and complicated process consisting of stepper exposure, photoresist development, bake, acid etching, etc., and heavily rely on the technology development of both lithography machines and chemical photoresists. Hence, it is essential to pay close attention to the ''bottom-up'' fabrication method as a potential alternative technology for the nano-manufacture of ICs.…”

Section: Introductionmentioning

confidence: 99%