Nanosecond Microwave Semiconductor Switches for 258…266 GHz

Non‐linear characteristics of an optically reconfigurable microwave switch

“…Thus, photoconductivity-based tuning in a semiconductor, despite its relatively lossy behaviour [7], could be a strong candidate technology because of a number of important advantages. These include very high operating frequencies, with up to 266 GHz operation having been shown [8], very linear performance [9], and good power handling capability [10]. An optically controlled photoconductive microwave switch has been demonstrated [10], where the third-order intercept point (TOIP) was measured as +63 dBm referred to the RF output signal power in a single-tone harmonic non-linearity test with a maximum 1 W RF input power.…”

Long-Pulsed Modulation Regimes of Subterahertz Nanosecond Waveguide Switches

“…Sub-terahertz resonator cavity-based switches [1,2] with an active semiconductor element of Gallium Arsenide (GaAs) driven by laser pulses are used to cut microwave signal from a generator to series of wave packets. Intrinsic properties of Gallium Arsenide crystal help to achieve nanosecond level of switching performance with green driving laser emission [3]. The resonant waveguide cavity construction ensures low phase distortion to the packets' at the output [4].…”

An Optically Controlled Coplanar Waveguide Millimeter-Wave Switch

“…Therefore, there is a requirement for alternative technologies that work well at these very high frequencies. One such approach is based on Optically Induced Plasmas (OIPs) [13][14][15][16][17]. Our previous work has described the basic physics of a microstrip gap based optical switch [18].…”