Nanosecond Kinetics of Upconversion Process in EDF and its Effect on EDFA Performance

Myśliński, P.; Fraser, James M.; Chrostowski, J.

doi:10.1364/oaa.1995.the3

Cited by 16 publications

(28 citation statements)

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“…This. typically requires two orders of magnitude higher Era+ concentrations, at which parasitic energy transfer between excited Er-ions reduces the gain [3][4][5][6][7][8][9][10]. The mechanism of the parasitic effect is illustrated in Fig.…”

mentioning

confidence: 99%

Two-Particle Parasitic Effects in Rare-Earth Doped Waveguides

Jaskorzyńska

1999

Acta Phys. Pol. A

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This paper discusses Er-doped optical waveguides implemented in glass materials. The emphasis is put on physical limitations posed by concentration dependent nonlinear effects and on methods for their characterization. Examples of recently demonstrated, best performance integrated active devices are also given.PACS numbers: 42.65.-k Optical fibers and planar waveguides can be made active, i.e. exhibit amplification, by inserting rare-earth ions in their core. Most of the related research has been focused on fibers and planar waveguides doped with erbium (Er) because . they provide gain at the 1.5 µm band, which is of particular interest for telecommunication applications. For pumping Er ions one typically uses laser diodes at 980 nm or 1.48 µm, as it is illustrated in Fig. 1.Planar active waveguides are considered to be an attractive option for realizing integrated optical devices with gain [1,2]. A prerequisite for realizing practical active devices is that a sufficiently large gain can be obtained at reasonable pumping powers. While this can easily be achieved in a few meter long active fibers, their planar counterparts tend to suffer from low gain efficiencies. Apart from much higher losses, the main difficulty is that a usable gain must be accumulated over a much shorter (a few centimeters) length. This. typically requires two orders of magnitude higher Era+ concentrations, at which parasitic energy transfer between excited Er-ions reduces the gain [3][4][5][6][7][8][9][10]. The mechanism of the parasitic effect is illustrated in Fig. 2. The excitation energy (1) is transferred (2) from one excited ion (donor) to the other (acceptor), which typically occurs via electric dipole-dipole interaction. Consequently the donor relaxes (2) to the ground state while the acceptor is upconverted to the 4I9/2 state (2). This is usually followed by two fast, non-radiative relaxation processes (3,4a) down to the metastable level 4 l13/2. However, a small fraction of the ions relaxes to the ground level (4b) emit-. ting photons at 980 nm. As a result only one of the two pump photons absorbed by the Er ions can be used for amplification at 1.5 µm. The energy of the other

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confidence: 99%

Two-Particle Parasitic Effects in Rare-Earth Doped Waveguides

Jaskorzyńska

1999

Acta Phys. Pol. A

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“…5.1 show the pump absorption versus launched pump power of the waveguide with an Er A number of authors [109][110][111][112][113] have attributed a similar behavior observed in other host materials to a fast quenching process. In our samples, such a process can be induced by, e.g., fast static ETU due to active ion pairs or clusters, energy transfer to undesired impurities, or trapping of excitation energy by host material defects, such as voids.…”

Section: +mentioning

confidence: 67%

“…The quenched ions still absorb pump light, like the active ions do, but their luminescence is strongly quenched with a characteristic decay time  1q . This quenched decay time has been the subject of several investigations in other host materials, resulting in values either on the order of a few µs [110] or as short as 50 ns [113] …”

Section: +mentioning

confidence: 99%

“…This range of  1q includes both, the values of 50 ns [113] and few µs [110] , potentially due to the increasing probability of Er 3+ -pair/cluster formation, the larger number of luminescence-quenching defects, and/or the increasing concentration of impurities (if introduced to the samples as part of the Er 3+ -containing raw material) and closer proximity of Er 3+ ions to them with increasing dopant concentration. , as well as the calculated absorption curve for the same W ETU1 coefficient but f q = 0% as comparison, represented by the blue dashed-dotted line (4).…”

Section: 6) the Correct Values Of W Etu1mentioning

confidence: 99%

“…Since the exact decay time  1q of the quenched ions is not known, we performed simulations for two different  1q values, the 50 ns reported in Ref. [113] and the value on the order of 1 µs found in Refs. [109][110][111][112].…”

Section: Quenched Ions In Luminescence-decay Curves Under Pulsed Excimentioning

confidence: 99%

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