Nanoscopic Photoluminescence Properties of a Green-Emitting InGaN Single Quantum Well on a $\{20\bar{2}1\}$ GaN Substrate Probed by Scanning Near-Field Optical Microscopy

Kaneta, Akio; Kim, Yoon Seok; Funato, Mitsuru; Kawakami, Yoichi; Enya, Yohei; Kikuchi, Takashi; Ueno, Masaki; Nakamura, Toshio

doi:10.1143/apex.5.102104

Cited by 29 publications

(25 citation statements)

References 24 publications

(35 reference statements)

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“…The large S-shaped shift behaviour of the peak energy is characteristic of the localization effect. The degree of the localization effect can be determined by fitting the temperature-dependent emission energy curve using the band-tail model636465: where E(T) is the emission energy at T, E g (0) is the energy gap at 0 K, and α and β are the Varshni coefficients. The third term originates from the localization effect, and σ indicates the degree of the localization effect, where in general, a larger value of σ corresponds to a stronger localization effect.…”

Section: Resultsmentioning

confidence: 99%

Temperature-dependent photoluminescence in light-emitting diodes

Lü

et al. 2014

Sci Rep

133

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Temperature-dependent photoluminescence (TDPL), one of the most effective and powerful optical characterisation methods, is widely used to investigate carrier transport and localized states in semiconductor materials. Resonant excitation and non-resonant excitation are the two primary methods of researching this issue. In this study, the application ranges of the different excitation modes are confirmed by analysing the TDPL characteristics of GaN-based light-emitting diodes. For resonant excitation, the carriers are generated only in the quantum wells, and the TDPL features effectively reflect the intrinsic photoluminescence characteristics within the wells and offer certain advantages in characterising localized states and the quality of the wells. For non-resonant excitation, both the wells and barriers are excited, and the carriers that drift from the barriers can contribute to the luminescence under the driving force of the built-in field, which causes the existing equations to become inapplicable. Thus, non-resonant excitation is more suitable than resonant excitation for studying carrier transport dynamics and evaluating the internal quantum efficiency. The experimental technique described herein provides fundamental new insights into the selection of the most appropriate excitation mode for the experimental analysis of carrier transport and localized states in p-n junction devices.

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Section: Resultsmentioning

confidence: 99%

Temperature-dependent photoluminescence in light-emitting diodes

Lü

et al. 2014

Sci Rep

133

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“…Such a systematic study on ð11 22Þ semipolar InGaN/GaN MQW with high indium content has not yet been reported, even on very expensive free-standing semipolar GaN substrates. [9][10][11][12][13][14]21 The ð11 22Þ semi-polar GaN has been obtained by overgrowth on nanorod templates, which were fabricated using our self-organized nickel nano-mask technique. 6,7 Four samples, each with five periods of InGaN/GaN MQWs were grown on the overgrown ð11 22Þ GaN.…”

mentioning

confidence: 99%

“…This has also been observed on InGaN/GaN MQWs grown on free-standing GaN substrates. [9][10][11][12][13] A standard two exponential component model is used to study excitonic dynamics, and thus TRPL traces [I(t)] can be described by [16][17][18] IðtÞ ¼ A 1 expðÀt=s 1 Þ þ A 2 expðÀt=s 2 Þ:…”

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confidence: 99%

Temporally and spatially resolved photoluminescence investigation of (112¯2) semi-polar InGaN/GaN multiple quantum wells grown on nanorod templates

Liu

Smith

Athanasiou

et al. 2014

Applied Physics Letters

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By means of time-resolved photoluminescence (PL) and confocal PL measurements, temporally and spatially resolved optical properties have been investigated on a number of InxGa1−xN/GaN multiple-quantum-well (MQW) structures with a wide range of indium content alloys from 13% to 35% on (112¯2) semi-polar GaN with high crystal quality, obtained through overgrowth on nanorod templates. With increasing indium content, the radiative recombination lifetime initially increases as expected, but decreases if the indium content further increases to 35%, corresponding to emission in the green spectral region. The reduced radiative recombination lifetime leads to enhanced optical performance for the high indium content MQWs as a result of strong exciton localization, which is different from the behaviour of c-plane InGaN/GaN MQWs, where quantum confined Stark effect plays a dominating role in emission process.

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“…[6][7][8] In other cases, lower potential sites were found to occur in the same regions as an enhanced nonradiative recombination. This effect was observed in green emitting polar InGaN QWs, 7,9 certain semipolar InGaN QWs, 10,11 and AlGaN layers 12 and QWs. 13 In this work, we probe spatial band gap inhomogeneities in semipolar ð20 21Þ QWs by measuring near-field (NF) photoluminescence (PL) spectra.…”

Section: Introductionmentioning

confidence: 77%

“…Scanning NF optical microscopy allows mapping optical properties with subwavelength resolution, which has proved to be a powerful tool to study spatial variations of light emission in ternary nitride structures and devices. [6][7][8][10][11][12][13][14][15] Particularly, for ð20 21Þ InGaN QWs, NF PL measurements were previously reported for just one QW sample with x $ 0.30. 11 Rather large PL intensity variations occurring on a 100 nm scale were observed and assigned to features of the surface morphology.…”

Section: Introductionmentioning

confidence: 98%

High spatial uniformity of photoluminescence spectra in semipolar (202¯1) plane InGaN/GaN quantum wells

Gelžinytė

Ivanov

Marcinkevičius

et al. 2015

Journal of Applied Physics

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Articles you may be interested inTemporally and spatially resolved photoluminescence investigation of ( 11 2 ¯ 2 ) semi-polar InGaN/GaN multiple quantum wells grown on nanorod templates Appl. Phys. Lett. 105, 261103 (2014); 10.1063/1.4905191Highly polarized photoluminescence and its dynamics in semipolar ( 20 2 ¯ 1 ¯ ) InGaN/GaN quantum well Appl. Phys. Lett.High optical polarization ratio of semipolar ( 20 2 ¯ 1 ¯ ) -oriented InGaN/GaN quantum wells and comparison with experiment J. Appl. Phys. 112, 093106 (2012); 10.1063/1.4764316 Dynamics of polarized photoluminescence in m -plane InGaN/GaN quantum wellsScanning near-field optical spectroscopy was applied to study spatial variations of emission spectra at room temperature in semipolar ð20 21Þ In x Ga 1Àx N/GaN single quantum wells (QWs) for 0:11 x 0:36. Photoluminescence (PL) was found to be highly uniform, with peak wavelength deviations and peak intensity deviations divided by average values in the range of 6-12 meV and 0.03-0.07, respectively. Near-field maps of PL parameters showed large, $5 to 10 lm size areas of similar values, as opposed to 100 nm scale variations, often reported for InGaN QWs. The nearfield PL spectra were found to broaden with increasing InN molar fraction. In the low In content QWs, the broadening is primarily determined by the random cation distribution, while for larger InN molar fractions 10 nm scale localization sites with increasingly deeper band potentials are suggested as the linewidth broadening cause. V C 2015 AIP Publishing LLC.

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Nanoscopic Photoluminescence Properties of a Green-Emitting InGaN Single Quantum Well on a $\{20\bar{2}1\}$ GaN Substrate Probed by Scanning Near-Field Optical Microscopy

Cited by 29 publications

References 24 publications

Temperature-dependent photoluminescence in light-emitting diodes

Temperature-dependent photoluminescence in light-emitting diodes

Temporally and spatially resolved photoluminescence investigation of (112¯2) semi-polar InGaN/GaN multiple quantum wells grown on nanorod templates

High spatial uniformity of photoluminescence spectra in semipolar (202¯1) plane InGaN/GaN quantum wells

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