Nanoscopic Patterned Materials with Tunable Dimensions via Atomic Layer Deposition on Block Copolymers

Peng, Qing; Tseng, Yu‐Chih; Darling, Seth B.; Elam, Jeffrey W.

doi:10.1002/adma.201002465

Cited by 266 publications

(387 citation statements)

References 38 publications

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“…This approach has been used to create nanopatterned metal oxide lines by infiltrating ALD precursors into layered bulk co-polymer films. 43 …”

Section: Ald and Vapor Infusion Into Polymersmentioning

confidence: 99%

History of atomic layer deposition and its relationship with the American Vacuum Society

Parsons¹,

Elam²,

George³

et al. 2013

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. This article explores the history of atomic layer deposition (ALD) and its relationship with the American Vacuum Society (AVS). The authors describe the origin and history of ALD science in the 1960s and 1970s. They also report on how the science and technology of ALD progressed through the 1990s and 2000s and continues today. This article focuses on how ALD developed within the AVS and continues to evolve through interactions made possible by the AVS, in particular, the annual International AVS ALD Conference. This conference benefits students, academics, researchers, and industry practitioners alike who seek to understand the fundamentals of self-limiting, alternating binary surface reactions, and how they can be applied to form functional (and sometimes profitable) thin film materials. The flexible structure of the AVS allowed the AVS to quickly organize the ALD community and create a primary conference home. Many new research areas have grown out of the original concepts of "Atomic Layer Epitaxy" and "Molecular Layering," and some of them are described in this article. The people and research in the ALD field continue to evolve, and the AVS ALD Conference is a primary example of how the AVS can help a field expand and flourish.

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“…This approach has been used to create nanopatterned metal oxide lines by infiltrating ALD precursors into layered bulk co-polymer films. 43 …”

Section: Ald and Vapor Infusion Into Polymersmentioning

confidence: 99%

History of atomic layer deposition and its relationship with the American Vacuum Society

Parsons¹,

Elam²,

George³

et al. 2013

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

Self Cite

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“…Peng et al [ 111 ] were the fi rst to employ an ALD derived process (in later publications coined sequential infi ltration synthesis or SIS) with an asymmetric forming PS-b -PMMA BCP system consisting of either nanoposts or cylinders to fabricate metal oxide arrays. As depicted in Figure 9 and Figure 10 , the SIS process involves initial exposure of the PS-b -PMMA fi lms to precursor molecules (trimethyl aluminum or titanium tetrachloride/water) possessing an affi nity to the reactive PMMA microdomain.…”

Section: Sequential Infi Ltration Synthesis Of Block Copolymersmentioning

confidence: 99%

“…e-h) Reproduced with permission. [ 118 ] [53,55,60,80,97] Co posts, [58] Co nanorings, [61] Fe posts, [63] Cr posts [59,73] aligned Al and Au nanowires, [64] Ge nanowires, [68] Al 2 O 3 dots, [66] Ti/Pt dots [85] On-chip etch mask, [44] ferromagnetic nanorings, [61] carbon nanotube growth, [63] metal nanodot memory device, [73] triboelectric generator, [62] resistive switching nanodevice, [85] plasmonic, [97] Atomic layer deposition Al 2 O 3 line and hole spacer, [94] Al 2 O 3 wires and posts [95,96] On-chip etch mask [96] Sequential infi ltration synthesis Al 2 O 3 posts, [111 , 116-120 , 122] Al 2 O 3 wires, [111][112][113][114][115][116] TiO 2 wires, [111] SiO 2 posts, [112] SiO 2 wires, [112] W wires, [112] ZnO posts, [116] ZnO wires [112,116] On-chip etch mask, [113-115 , 117,118] SIS procedure for PS block selectivity, [116] superhydrophobicity, [117,118] anti-refl ec...…”

Section: Reviewmentioning

confidence: 99%

Strategies for Inorganic Incorporation using Neat Block Copolymer Thin Films for Etch Mask Function and Nanotechnological Application

et al. 2016

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Block copolymers (BCPs) and their directed self-assembly (DSA) has emerged as a realizable complementary tool to aid optical patterning of device elements for future integrated circuit advancements. Methods to enhance BCP etch contrast for DSA application and further potential applications of inorganic nanomaterial features (e.g., semiconductor, dielectric, metal and metal oxide) are examined. Strategies to modify, infiltrate and controllably deposit inorganic materials by utilizing neat self-assembled BCP thin films open a rich design space to fabricate functional features in the nanoscale regime. An understanding and overview on innovative ways for the selective inclusion/infiltration or deposition of inorganic moieties in microphase separated BCP nanopatterns is provided. Early initial inclusion methods in the field and exciting contemporary reports to further augment etch contrast in BCPs for pattern transfer application are described. Specifically, the use of evaporation and sputtering methods, atomic layer deposition, sequential infiltration synthesis, metal-salt inclusion and aqueous metal reduction methodologies forming isolated nanofeatures are highlighted in di-BCP systems. Functionalities and newly reported uses for electronic and non-electronic technologies based on the inherent properties of incorporated inorganic nanostructures using di-BCP templates are highlighted. We outline the potential for extension of incorporation methods to triblock copolymer features for more diverse applications. Challenges and emerging areas of interest for inorganic infiltration of BCPs are also discussed.

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“…After infiltration, the BCP template was removed by O 2 RIE or by heating the film to 500 • C so that Al 2 O 3 lines, which replicated the BCP microdomains, remained [50]. Control over the width of the Al 2 O 3 mask was achieved by varying the ALD cycle counts [50]. The SIS process improved the etching resistance of the PMMA domains by a factor of 37 by using HBr gas for the RIE [52].…”

Section: (A) Ps-b-pi and Ps-b-pbmentioning

confidence: 99%

Pattern transfer using block copolymers

Gunkel

Russell

2013

Phil. Trans. R. Soc. A.

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To meet the increasing demand for patterning smaller feature sizes, a lithography technique is required with the ability to pattern sub-20 nm features. While top-down photolithography is approaching its limit in the continued drive to meet Moore's law, the use of directed self-assembly (DSA) of block copolymers (BCPs) offers a promising route to meet this challenge in achieving nanometre feature sizes. Recent developments in BCP lithography and in the DSA of BCPs are reviewed. While tremendous advances have been made in this field, there are still hurdles that need to be overcome to realize the full potential of BCPs and their actual use.

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Nanoscopic Patterned Materials with Tunable Dimensions via Atomic Layer Deposition on Block Copolymers

Cited by 266 publications

References 38 publications

History of atomic layer deposition and its relationship with the American Vacuum Society

History of atomic layer deposition and its relationship with the American Vacuum Society

Strategies for Inorganic Incorporation using Neat Block Copolymer Thin Films for Etch Mask Function and Nanotechnological Application

Pattern transfer using block copolymers

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