Nanoscale thick layer transfer of hydrogen-implanted wafer by using polycrystalline silicon sacrificial layer

Lee, T. H.; Huang, Chen Hung; Yang, Yu-Pu; Suryasindhu, T.; Li, Peiwen

doi:10.1063/1.2806913

Cited by 3 publications

(5 citation statements)

References 8 publications

(2 reference statements)

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“…27 The samples implanted with 2.5 × 10 16 ions/cm 2 were bonded to bare silicon wafers using oxygen-plasma-activated wafer bonding. 34 The silicon-sacrificial layer not only reduced the implant depth by operating at an ordinary implant energy 30 but also served as a filter that blocked co-implanted impurities completely (Figure S2 in the Supporting Information) to ensure nanoscale SPEG processing. To compare this with the standard ion-cut process, we split one bonded sample by annealing it at 750 °C as shown in Figure 4.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

“…The Si-clad layer can adjust the H + implant depth 30 for splitting a silicon layer less than 100 nm but avoid reducing implant energy below 30 keV. 18 The clad layer acts not only as a sacrificial layer to absorb the implant energy and most of the bombardment damage but also serves as a filter blocking any co-implanted impurities weighing more than hydrogen ions.…”

Section: ■ Introductionmentioning

confidence: 99%

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Rapid Fabrication of 100 nm or Thinner Fully Depleted Silicon-on-Insulator Materials for Ultralow Energy Consumption

Lee

Huang

et al. 2018

ACS Appl. Nano Mater.

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The fully depleted silicon-on-insulator (FD-SOI) wafer is the core material of the FD-SOI technology used for manufacturing the applications with ultralow energy consumption for internet of things, artificial intelligence, automotive, and wearable devices. Ion-cut process is the main technology to fabricate FD-SOI wafers. After ion cutting, the silicon layer transferred on the insulator includes a spongelike damaged layer. Therefore, it must contain a thinning buffer layer with a thickness more than 150 nm to remove the damaged layer by a polishing step. The requirement of the additional buffer layer makes the direct fabrication of a less than 100 nm thick SOI layer from the as-split status impossible. Here, we develop a process based on solid-phase epitaxial growth (SPEG) technique, abandoning the polishing step, and thus achieve a one-step fabrication of FD-SOI substrate. First, inducing amorphization of an SOI layer via blistering supersaturated hydrogen ions through microwaving fully consumes the possible stable defect clusters. Next, using SPEG technique catalyzed by surrounding hydrogen ions restores the amorphized SOI layer to the initial crystalline structure. To approach the purpose, a silicon (Si)-clad layer deposited on the oxidized surface was used. The Si-clad layer has two functions promoting the success of SPEG processing. It acts as a filter to prevent co-implanted impurities in the silicon layer to avoid the occurrence of crystal segregation during recrystallization. It also serves as a sacrificial layer to bring the split location close to the implant peak causing the hydrogen concentration in the entire SOI layer in supersaturation. When amorphizing this layer, an undamaged crystalline layer is retained at the interface of the SiO2/Si as a seed layer to promote the regrowth of a perfect SOI layer in a argon-annealing step. By integrating with the ion-shower implantation used in flat-panel display manufacturing, the technology can fabricate the next generation of larger SOI wafers without the need to upgrade the ion implanter.

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Section: ■ Results and Discussionmentioning

confidence: 99%

Section: ■ Introductionmentioning

confidence: 99%

Rapid Fabrication of 100 nm or Thinner Fully Depleted Silicon-on-Insulator Materials for Ultralow Energy Consumption

Lee

Huang

et al. 2018

ACS Appl. Nano Mater.

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“…This oxyfluoride layer provides the sacrificial layer for the detachment of the metal oxide membranes from the underlying base metal surface. In contrast to cases in which the thin film is grown on top of the sacrifical layer, − in our case, the sacrificial layer grows in situ during the formation of oxide in the same electrolyte solution, making the process simpler and straightforward. In addition to being responsible for the detachment, the fluoride ions also etch the oxide under acidic conditions to make it porous.…”

Section: Resultsmentioning

confidence: 99%

“…19 Despite these advances, each method is usually limited to a particular material, leaving room for the development of additional processes suitable for complementary materials. In the case of semiconductors (GaN 20,21 and Si 22 ), sacrificial layers have been deposited before the thin film was grown. Later, the sacrificial layer can be dissolved to yield a freestanding film.…”

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confidence: 99%

Universal Method for the Fabrication of Detachable Ultrathin Films of Several Transition Metal Oxides

et al. 2008

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Ultrathin films are important nanoscale structures that are used extensively in a variety of technological contexts. However, it has traditionally been difficult and costly to fabricate detachable and purely inorganic high aspect ratio films with controlled thickness and good uniformity. Here we report a versatile method to make separable purely inorganic membranes of various metal oxides such as Nb(2)O(5), TiO(2), WO(3), and Ta(2)O(5) with thicknesses ranging from 30 to 150 nm. Fluoride ions are migrated through the oxide film and upon arrival at the oxide-metal interface form a sacrificial soluble oxyfluoride layer. Fluorine also plays a role in controlling the porosity of the films. The study exposes the mechanism behind the detachment process that is largely due to the fast migration of fluoride anions relative to oxygen anions. The resulting films have a wide range of potential applications as catalysts or catalyst supports, filtration membranes, sensors, and more.

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“…However, CMP may result in a transfer layer with varying thickness, depending on the implant energy, and can cause subsurface damage because of plastic deformation or brittle fracture during contact removal. 5 The sacrificial layer method 6 can be used to efficiently control the thickness uniformity of the transferred Si layer on a nanometer scale. In this case, no separate thinning process is required, and contamination of the transferred layer during low energy ͑a few kilo-electron-volts͒ ion implantation can be avoided.…”

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confidence: 99%

HF/H[sub 2]O[sub 2] Etching for Removal of Damage Layer on As-Transferred Si Layer Formed by Ion-Cut Process

Ho¹,

Huang²,

Chen³

et al. 2010

Electrochem. Solid-State Lett.

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When a 100 nm thick Si layer was transferred onto a bare Si wafer by the hydrogen-induced-layer-transfer process, a spongy damage layer with microvoids was formed on the transferred layer because of hydrogen blistering. The surface-to-volume ratio of the damage layer was greater than that of the layer where blistering did not occur. Therefore, the damage layer was selectively etched by an HF/H 2 O 2 mixture and completely removed ͑the etching rates of Si at 70°C for the bulk layer and damage layer were 0.45 and 13.8 nm/min, respectively͒. Consequently, a smooth, damage-free Si layer ͑root-mean-square roughness = 2.74 nm͒ was obtained.The hydrogen-induced-layer-transfer process, also known as the ion-cut process or smart cut process, is employed to fabricate silicon-on-insulator ͑SOI͒ wafers used in the manufacture of highend integrated circuits. 1 In this process, H + ions ͑dose: 3.5 ϫ 10 16 -1.0 ϫ 10 17 cm −2 2 ͒ are implanted in a Si wafer capped with a dielectric layer to obtain a layer of H + ions at a certain depth ͑hereafter referred to as "buried layer"͒ forming the desired layer for layer transfer. Subsequently, the H + -implanted wafer and a handle wafer are bonded together by an appropriate wafer bonding technique.Annealing the bonded pair at 500-600°C results in the formation of hydrogen microbubbles, and the aggregation of these microbubbles in the buried layer leads to crack propagation around the damage peak formed during ion implantation. 2 The desired layer is then transferred to the surface of the handle wafer. The surface of the as-split layer is rough because the buried layer is fractured by hydrogen blistering; the root-mean-square ͑rms͒ roughness of the as-split layer is approximately 8-11 nm 3 at an implant dose of 10 17 cm −2 of H + . Most of the defects generated during H + ion implantation are distributed on one side of the transferred layer, which results in the formation of a spongy damage layer on the transferred layer after the annealing process. The cross-sectional transmission electron microscopy ͑TEM͒ image in Fig. 1 shows that most of the lattice damage layer is filled with hydrogen ions, which is introduced by the implantation ͑H 2 + ion dose: 4 ϫ 10 16 cm −2 , 160 keV͒ on one side of the transferred layer. The as-implanted silicon wafer is covered by a 300 nm thick polycrystalline silicon layer and a 100 nm thick SiO 2 layer.The device performance of a fully depleted ͑FD͒ transistor is strongly dependent on the thickness of the SOI layer. In FD nanodevices, the thickness of the Si films should be controlled within an accuracy of a few nanometers for a good parameter reproducibility. For example, to suppress short-channel effects ͑SCEs͒ in 70 nm FD SOI transistors, it is necessary to reduce the thickness of the SOI layer to within 30 Ϯ 5% nm. 4 However, it is difficult to maintain a uniform thickness when the well-defined layer is thinned by chemical mechanical polishing ͑CMP͒.Because of the low mass of H + ions, it is usually necessary to thin the transferred layer by CMP for ac...

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Nanoscale thick layer transfer of hydrogen-implanted wafer by using polycrystalline silicon sacrificial layer

Cited by 3 publications

References 8 publications

Rapid Fabrication of 100 nm or Thinner Fully Depleted Silicon-on-Insulator Materials for Ultralow Energy Consumption

Rapid Fabrication of 100 nm or Thinner Fully Depleted Silicon-on-Insulator Materials for Ultralow Energy Consumption

Universal Method for the Fabrication of Detachable Ultrathin Films of Several Transition Metal Oxides

HF/H[sub 2]O[sub 2] Etching for Removal of Damage Layer on As-Transferred Si Layer Formed by Ion-Cut Process

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