Nanoscale study of conduction through carbon nanotube networks

Stadermann, Michael; Papadakis, S. J.; Falvo, M. R.; Novak, James P.; Snow, E. S.; Fu, Qiang; Liu, J.; Fridman, Yonatan; Boland, John J.; Superfine, Richard; Washburn, S.

doi:10.1103/physrevb.69.201402

Cited by 145 publications

(148 citation statements)

References 12 publications

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“…An alternating voltage is applied in order to obtain spatially resolved information about the electrical capacitance, which depends on the number density of mobile electrons and holes. This method has also allowed to investigate the nanoscopic conduction pathways for electrons and holes in electroluminescent polymers [14], in metal-insulatornanocomposites [15] and in networks of nanotubes [16].…”

Section: Introductionmentioning

confidence: 99%

Ion Jump Dynamics in Nanoscopic Subvolumes Analyzed by Electrostatic Force Spectroscopy

Schirmeisen¹,

Taskiran

Bracht

et al. 2010

Zeitschrift Für Physikalische Chemie

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Ion Dynamics / Electrostatic Atomic Force MicroscopyA nanoscopic technique based on electrostatic force spectroscopy in the time domain is introduced. This technique is used to characterize the ion dynamics in nanoscale subvolumes of solid electrolytes. Nanoscopic polarization spots can be created and directly visualized, and their time evolution can be studied. In the case of partially crystallized glass ceramics, the dynamic processes in different phases (glassy, crystalline and interface) can be distinguished and their activation energies and pre-exponential factors can be quantified. By applying grid-type spectroscopic measurements, maps of the local relaxation strength are obtained, giving information about the spatial distribution of the glassy and crystalline phase.

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Section: Introductionmentioning

confidence: 99%

Ion Jump Dynamics in Nanoscopic Subvolumes Analyzed by Electrostatic Force Spectroscopy

Schirmeisen¹,

Taskiran

Bracht

et al. 2010

Zeitschrift Für Physikalische Chemie

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“…14,15 Only the semiconducting tubes can have their conductance significantly modulated by the gate in an FET. The switching mechanism in CNTN-FETs can be due to modulation of the Schottky barriers between semiconducting tubes and metallic tubes [16][17][18] or metal contacts. 19 It could also be due to modulation of semiconducting tube conductance either by controlling the carrier density or by modulating Schottky barriers in semiconducting tubes formed by defects or overlaps with metallic tubes.…”

mentioning

confidence: 99%

“…To begin investigating the sources of resistance in different types of CNTN-FETs, we have employed EFM to create maps of where the voltage drops in the films when a current flows through them [29][30][31][32][33][34][35] (see Supporting Information for a description of the EFM technique). Our first images are of CVD grown films contacted by 40 µm wide Ti/Au source and drain electrodes with 40 µm spacing.…”

mentioning

confidence: 99%

Charge Transport in Interpenetrating Networks of Semiconducting and Metallic Carbon Nanotubes

et al. 2009

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Carbon nanotube network field effect transistors (CNTN-FETs) are promising candidates for low cost macroelectronics. We investigate the microscopic transport in these devices using electric force microscopy and simulations. We find that in many CNTN-FETs the voltage drops abruptly at a point in the channel where the current is constricted to just one tube. We also model the effect of varying the semiconducting/ metallic tube ratio. The effect of Schottky barriers on both conductance within semiconducting tubes and conductance between semiconducting and metallic tubes results in three possible types of CNTN-FETs with fundamentally different gating mechanisms. We describe this with an electronic phase diagram.

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“…Their potential applicability in building of carbon-based nanodevices has been demonstrated by the construction of rectifying diodes [1], field-effect transistors [2], or carbon nanotube conducting networks [3]. In some of these applications one has to connect two or more different carbon nanotubes.…”

Section: Introductionmentioning

confidence: 99%

Band Structure and Quantum Conductance of Metallic Carbon Nanotube Superlattices

2005

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The electronic structure and quantum conductance of rotationally invariant (6,6)/(12,0) and rotationally non-invariant (5,5)/(8,2) superlattices made of metallic carbon nanotubes are investigated. It is shown that, except in the limit of very large periods, the quantum conductance of such superlattices does not critically depend on their rotational invariance, although it does in case of quantum dots and single junctions made of these nanotubes.

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Nanoscale study of conduction through carbon nanotube networks

Cited by 145 publications

References 12 publications

Ion Jump Dynamics in Nanoscopic Subvolumes Analyzed by Electrostatic Force Spectroscopy

Ion Jump Dynamics in Nanoscopic Subvolumes Analyzed by Electrostatic Force Spectroscopy

Charge Transport in Interpenetrating Networks of Semiconducting and Metallic Carbon Nanotubes

Band Structure and Quantum Conductance of Metallic Carbon Nanotube Superlattices

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