Abstract:For the past decade, stressors have been incorporated into the source and drain regions of the silicon semiconductor device to change the lattice constant of the current-carrying region in the channel, thereby altering the band structure of the semiconductor to enhance device performance. In semiconductor industry, it is critical to measure strain distributions at the nanometer scale. In recent years, dual lens dark field electron holography and precession electron diffraction are developed to obtain strain di… Show more
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