Nanoscale silicon wires synthesized using simple physical evaporation

Abstract

We report the large-scale synthesis of silicon nanowires (SiNWs) using a simple but effective approach. High purity SiNWs of uniform diameters around 15 nm were obtained by sublimating a hot-pressed silicon powder target at 1200 °C in a flowing carrier gas environment. The SiNWs emit stable blue light which seems unrelated to quantum confinement, but related to an amorphous overcoating layer of silicon oxide. Our approach can be used, in principle, as a general method for synthesis of other one-dimensional semiconducting, or conducting nanowires.

Nickel Silicide Nanowire Growth and Applications

“…Metal References 300-600 Au Westwater et al, 1997;Zeng et al, 2003 1150-1200 Fe Yu et al, 1998;Wang et al, 1999;Feng et al, 2000;Zhang et al 1998 VLS …”

Synthesis of quantum-confined CdS nanotubes

“…It helps such materials to self assemble in the form of nanotubes. However, comparatively more isotropic materials like CdS (Zhan et al 2000), CdSe , GaAs , and Si (Yu et al 1998) tend to form nanowires instead of nanotubes. Therefore, nanotubes of these isotropic materials are generally synthesized by using nanowires as templates.…”

Electrically Detected Magnetic Resonance of Donors and Interfacial Defects in Silicon Nanowires

“…15 16 Silicon nanowires may be produced by different deposition techniques 17 such as laser ablation, 18 19 high temperature thermal evaporation, [20][21][22] molecular beam epitaxy (MBE), 23 chemical vapor deposition (CVD), [24][25][26] and plasma-enhanced CVD (PECVD). For device fabrication, top-down approaches, based on silicon on insulator substrates (SOI) and electron beam lithography and/or metalassisted chemical etching, [27][28][29][30][31][32] are preferred due to their scalability and industrial process integration.…”