Nanoscale Probing of Local Electrical Characteristics on MBE-Grown Bi<sub>2</sub>Te<sub>3</sub> Surfaces under Ambient Conditions

Macedo, Rita; Harrison, S. E.; Dorofeeva, Tatiana S.; Harris, James S.; Kiehl, R.A.

doi:10.1021/acs.nanolett.5b00542

Cited by 27 publications

(31 citation statements)

References 40 publications

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“…Fig. 2 confirmed that the structure of these synthesised samples had in nano scales in crystalline form according to other researcher reports [17, 18]. The roughness parameter was also observed through these samples.…”

Section: Resultssupporting

confidence: 88%

Cost‐effective chemical solution synthesis of bismuth telluride nanostructure for thermoelectric applications

Mamur

Dilmaç

Korucu

et al. 2018

Micro & Nano Letters

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In this work, the bismuth telluride (Bi 2 Te 3) nanostructure for thermoelectric applications was successfully synthesised by a new cost-effective chemical solution process. Firstly, the metal solutions of bismuth (III) nitrate pentahydrate and tellurium dioxide were mixed together at room temperature with adjusting the hydrodynamic atmosphere and introduced the sodium hydroxide. After that, different characterisation parameters, such as X-ray diffraction, atomic force microscopy (AFM), scanning electron microscopy (SEM), energy dispersive X-ray, and transverse electron microscopy (TEM) were obtained. Then, the average crystalline size of the Bi 2 Te 3 nanostructure was found 23 nm. According to these obtained results, the materials consist of every specimen in nano range dimension in AFM studies. The elemental of Bi and Te were arranged with their quite stoichiometric atomic ratio observed by SEM. Ultimately, the TEM micrographs showed that the powders exhibited an aggregate phenomenon, and the primary crystalline size was about low dimension.

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Section: Resultssupporting

confidence: 88%

Cost‐effective chemical solution synthesis of bismuth telluride nanostructure for thermoelectric applications

Mamur

Dilmaç

Korucu

et al. 2018

Micro & Nano Letters

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“…Bi 2 Se 3 thin film was produced by MBE system vaporized onto substrates (mica) . MoO 3 thin film was fabricated on the Bi 2 Se 3 using ZD‐400 (thermal deposition equipment).…”

Section: Methodsmentioning

confidence: 99%

Ultrahigh Stability 3D TI Bi₂Se₃/MoO₃ Thin Film Heterojunction Infrared Photodetector at Optical Communication Waveband

Yang

Han

Liu

et al. 2020

Adv Funct Materials

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Infrared (IR) detection at 1300–1650 nm (optical communication waveband) is of great significance due to its wide range of applications in commerce and military. Three dimensional (3D) topological insulator (TI) Bi2Se3 is considered a promising candidate toward high‐performance IR applications. Nevertheless, the IR devices based on Bi2Se3 thin films are rarely reported. Here, a 3D TI Bi2Se3/MoO3 thin film heterojunction photodetector is shown that possesses ultrahigh responsivity (Ri), external quantum efficiency (EQE), and detectivity (D*) in the broadband spectrum (405–1550 nm). The highest on–off ratio of the optimized device can reach up to 5.32 × 104. Ri, D*, and the EQE can reach 1.6 × 104 A W−1, 5.79 × 1011 cm2 Hz1/2 W−1, and 4.9 × 104% (@ 405 nm), respectively. Surprisingly, the Ri can achieve 2.61 × 103 A W−1 at an optical communication wavelength (@ 1310 nm) with a fast response time (63 µs), which is two orders of magnitude faster than that of other TIs‐based devices. In addition, the device demonstrates brilliant long‐term (>100 days) environmental stability under environmental conditions without any protective measures. Excellent device photoelectric properties illustrate that the 3D TI/inorganic heterojunction is an appropriate way for manufacturing high‐performance photodetectors in the optical communication, military, and imaging fields.

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“…Therefore, we may conclude that CO 2 plays no role in the surface degradation. [23][24][25][26][27] . By analogy with Sb 2 Te 3 the scattering and differences between the published experimental data can be attributed to the fact that the induction period is huge due to the low probability of the elementary chemical reaction event, which occurs on a time scale comparable with or faster than the time scale of experimental exposures.…”

Section: Introductionmentioning

confidence: 99%

Rapid Surface Oxidation of Sb₂Te₃ as Indication for a Universal Trend in the Chemical Reactivity of Tetradymite Topological Insulators

et al. 2016

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Within the last few years topological insulators (TIs) have attracted a lot of interest due to their unique electronic structure with spin-polarized topological surface states (TSSs), which may pave the way for these materials to have a great potential in multiple applications. However, to enable consideration of TIs as building blocks for novel devices, stability of TSSs towards oxidation should be tested. Among the family of TIs with tetradymite structure, Sb 2 Te 3 is of p-type and appears to be the least explored material since its TSS is unoccupied in the ground state, a property that allows the use of optical excitations to generate spin currents relevant for spintronics. Here, we report relatively fast surface oxidation of Sb 2 Te 3 under ambient conditions. We show that the clean surface reacts rapidly with molecular oxygen and slowly with water, and that humidity plays an important role at the stage of the oxide-layer growth. In humid air, we show that Sb 2 Te 3 oxidizes in a time scale of minutes to hours, and much faster than other tetradymite TIs. The high surface reactivity revealed by our experiments is of critical importance and must be taken into account for the production and exploitation of novel TI-based devices using Sb 2 Te 3 as working material. Our results provide a fundamental and comprehensive understanding of the universal trend underlying the chemical reactivity of TIs.2

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Nanoscale Probing of Local Electrical Characteristics on MBE-Grown Bi₂Te₃ Surfaces under Ambient Conditions

Cited by 27 publications

References 40 publications

Cost‐effective chemical solution synthesis of bismuth telluride nanostructure for thermoelectric applications

Cost‐effective chemical solution synthesis of bismuth telluride nanostructure for thermoelectric applications

Ultrahigh Stability 3D TI Bi₂Se₃/MoO₃ Thin Film Heterojunction Infrared Photodetector at Optical Communication Waveband

Rapid Surface Oxidation of Sb₂Te₃ as Indication for a Universal Trend in the Chemical Reactivity of Tetradymite Topological Insulators

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Nanoscale Probing of Local Electrical Characteristics on MBE-Grown Bi2Te3 Surfaces under Ambient Conditions

Cited by 27 publications

References 40 publications

Cost‐effective chemical solution synthesis of bismuth telluride nanostructure for thermoelectric applications

Cost‐effective chemical solution synthesis of bismuth telluride nanostructure for thermoelectric applications

Ultrahigh Stability 3D TI Bi2Se3/MoO3 Thin Film Heterojunction Infrared Photodetector at Optical Communication Waveband

Rapid Surface Oxidation of Sb2Te3 as Indication for a Universal Trend in the Chemical Reactivity of Tetradymite Topological Insulators

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Product

Resources

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Nanoscale Probing of Local Electrical Characteristics on MBE-Grown Bi₂Te₃ Surfaces under Ambient Conditions

Ultrahigh Stability 3D TI Bi₂Se₃/MoO₃ Thin Film Heterojunction Infrared Photodetector at Optical Communication Waveband

Rapid Surface Oxidation of Sb₂Te₃ as Indication for a Universal Trend in the Chemical Reactivity of Tetradymite Topological Insulators