Nanoscale phenomena ruling deposition and intercalation of AlN at the graphene/SiC interface

Kakanakova‐Georgieva, Anelia; Gueorguiev, Gueorgui Kostov; Sangiovanni, Davide; Suwannaharn, Nattamon; Ivanov, Ivan Gueorguiev; Cora, Ildikó; Pécz, B.; Nicotra, Giuseppe; Giannazzo, Filippo

doi:10.1039/d0nr04464d

Cited by 58 publications

(43 citation statements)

References 21 publications

(38 reference statements)

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“…have achieved 2D h‐AlN by MOCVD using the similar method. [ 231 ] The graphene is directly grown on 4H‐SiC (0001) by high‐temperature sublimation technique to form graphene/SiC template and then hydrogen in MOCVD reactor. The AlN material was grown using TMAl and NH 3 as precursors at the interface between SiC and epitaxial graphene.…”

Section: Growth Of 2d Iii‐nitride Materialsmentioning

confidence: 99%

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2D III‐Nitride Materials: Properties, Growth, and Applications

et al. 2021

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2D III‐nitride materials have been receiving considerable attention recently due to their excellent physicochemical properties, such as high stability, wide and tunable bandgap, and magnetism. Therefore, 2D III‐nitride materials can be applied in various fields, such as electronic and photoelectric devices, spin‐based devices, and gas detectors. Although the developments of 2D h‐BN materials have been successful, the fabrication of other 2D III‐nitride materials, such as 2D h‐AlN, h‐GaN, and h‐InN, are still far from satisfactory, which limits the practical applications of these materials. In this review, recent advances in the properties, growth methods, and potential applications of 2D III‐nitride materials are summarized. The properties of the 2D III‐nitride materials are mainly obtained by first‐principles calculations because of the difficulties in the growth and characterizations of these materials. The discussion on the growth of 2D III‐nitride materials is focused on 2D h‐BN and h‐AlN, as the developments of 2D h‐GaN and h‐InN are yet to be realized. Therefore, applications have been realized mostly based on the 2D h‐BN materials; however, many potential applications are cited for the entire range of 2D III‐nitride materials. Finally, future research directions and prospects in this field are also discussed.

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Section: Growth Of 2d Iii‐nitride Materialsmentioning

confidence: 99%

“…The growth mechanism of this method is the same with the mechanism in refs. [ 230,231 ] and has been shown in Figure 15. Al Balushi et al.…”

Section: Growth Of 2d Iii‐nitride Materialsmentioning

confidence: 99%

2D III‐Nitride Materials: Properties, Growth, and Applications

et al. 2021

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“…[ 2 ] 2D group III nitrides are mainly investigated by theoretical modeling predicting a lot of properties which are substantially different from the properties of their 3D crystals. There are a few successful experiments on achieving 2D GaN and 2D AlN, [ 3–6 ] which appear as ultrawide bandgap semiconductor materials. The successful formation of 2D GaN was achieved via the intercalation of gallium through bilayer graphene whereby the formation of 2D GaN occurs between the graphene and SiC substrate.…”

Section: Figurementioning

confidence: 99%

Indium Nitride at the 2D Limit

et al. 2020

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The properties of 2D InN are predicted to substantially differ from the bulk crystal. The predicted appealing properties relate to strong in‐ and out‐of‐plane excitons, high electron mobility, efficient strain engineering of their electronic and optical properties, and strong application potential in gas sensing. Until now, the realization of 2D InN remained elusive. In this work, the formation of 2D InN and measurements of its bandgap are reported. Bilayer InN is formed between graphene and SiC by an intercalation process in metal–organic chemical vapor deposition (MOCVD). The thickness uniformity of the intercalated structure is investigated by conductive atomic force microscopy (C‐AFM) and the structural properties by atomic resolution transmission electron microscopy (TEM). The coverage of the SiC surface is very high, above 90%, and a major part of the intercalated structure is represented by two sub‐layers of indium (In) bonded to nitrogen (N). Scanning tunneling spectroscopy (STS) measurements give a bandgap value of 2 ± 0.1 eV for the 2D InN. The stabilization of 2D InN with a pragmatic wide bandgap and high lateral uniformity of intercalation is demonstrated.

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“…Monosilane and bisethylcyclopentadienylmagnesium were used as n-and p-type dopants, respectively. To eliminate the negative effect caused by the mismatch in both the lattice constant and coefficient of thermal expansion and condensed phases containing Si-basis [34,35], a carefully engineered AlN/AlGaN multilayer buffer was grown, and hence high-quality epitaxial GaN-on-Si templates could be obtained. On these templates, the laser structure consisted of an n-type GaN contact layer, an n-type Al 0.07 Ga 0.93 N cladding layer (CL), three pairs of In 0.12 Ga 0.88 N/In 0.02 Ga 0.98 N quantum wells (QWs) sandwiched by In 0.01 Ga 0.99 N waveguide layers (WG), an Al 0.2 Ga 0.8 N electron blocking layer (EBL), a p-type Al 0.075 Ga 0.925 N CL and a p-type GaN contact layer.…”

Section: Methodsmentioning

confidence: 99%

Narrow-Linewidth GaN-on-Si Laser Diode with Slot Gratings

et al. 2021

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This letter reports room-temperature electrically pumped narrow-linewidth GaN-on-Si laser diodes. Unlike conventional distributed Bragg feedback laser diodes with hundreds of gratings, we employed only a few precisely defined slot gratings to narrow the linewidth and mitigate the negative effects of grating fabrication on the device performance. The slot gratings were incorporated into the ridge of conventional Fabry-Pérot cavity laser diodes. A subsequent wet etching in a tetramethyl ammonium hydroxide solution not only effectively removed the damages induced by the dry etching, but also converted the rough and tilted slot sidewalls into smooth and vertical ones. As a result, the threshold current was reduced by over 20%, and the reverse leakage current was decreased by over three orders of magnitude. Therefore, the room-temperature electrically pumped narrow-linewidth GaN-on-Si laser diode has been successfully demonstrated.

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Nanoscale phenomena ruling deposition and intercalation of AlN at the graphene/SiC interface

Abstract: The possibility for kinetic stabilization of prospective 2D AlN was explored by rationalizing MOCVD processes of AlN on epitaxial graphene.

Cited by 58 publications

References 21 publications

2D III‐Nitride Materials: Properties, Growth, and Applications

2D III‐Nitride Materials: Properties, Growth, and Applications

Indium Nitride at the 2D Limit

Narrow-Linewidth GaN-on-Si Laser Diode with Slot Gratings

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