Nanoscale organic transistors that use source/drain electrodes supported by high resolution rubber stamps

Zaumseil, Jana; Someya, Takao; Bao, Zhenan; Loo, Yueh Lin; Cirelli, Raymond A.; Rogers, John A.

doi:10.1063/1.1541941

Cited by 132 publications

(93 citation statements)

References 10 publications

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“…In these FETs, I D increased linearly with V D and showed no saturation regime (Fig. 4c); this lack of a saturation regime is due to the short channel effect 15,24 , which occurs in FETs that have sub-micrometre channel length. If the magnitude of V D was Z30 V, the device broke down as the channel length is so short.…”

Section: Resultsmentioning

confidence: 99%

Large-scale organic nanowire lithography and electronics

et al. 2013

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Controlled alignment and patterning of individual semiconducting nanowires at a desired position in a large area is a key requirement for electronic device applications. High-speed, large-area printing of highly aligned individual nanowires that allows control of the exact numbers of wires, and their orientations and dimensions is a significant challenge for practical electronics applications. Here we use a high-speed electrohydrodynamic organic nanowire printer to print large-area organic semiconducting nanowire arrays directly on device substrates in a precisely, individually controlled manner; this method also enables sophisticated large-area nanowire lithography for nano-electronics. We achieve a maximum field-effect mobility up to 9.7 cm 2 V À 1 s À 1 with extremely low contact resistance (o5.53 O cm), even in nano-channel transistors based on single-stranded semiconducting nanowires. We also demonstrate complementary inverter circuit arrays comprising well-aligned p-type and n-type organic semiconducting nanowires. Extremely fast nanolithography using printed semiconducting nanowire arrays provide a simple, reliable method of fabricating large-area and flexible nano-electronics.

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Section: Resultsmentioning

confidence: 99%

Large-scale organic nanowire lithography and electronics

et al. 2013

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“…[87][88][89][90][91] Silicon-based RFID tags are well known and have been used in various types of distribution system, recently playing a key role in traceability. In recent years, RFID tags have been fabricated on flexible substrates such as plastic and paper, and the range of applications in which they can play active roles has expanded.…”

Section: Flexible Radio Frequency Identificationmentioning

confidence: 99%

Ambient Electronics

Sekitani

Someya

2012

Jpn. J. Appl. Phys.

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“…Remarkably, despite the fact that rubbers become rigid upon cooling, this technique has been shown to work well at low temperatures [48]. Another important advantage of the PDMS stamp technique is that it is non-destructive and reversible: it has been shown that the contact between the stamp and the rubrene crystal can be re-established many times without noticeable degradation of the OMC surface [46]. For this reason, PDMS-supported circuitry has been used for the first observation of the anisotropy of the field-effect mobility within the a-b plane of the single crystals of rubrene, as we discuss in Sec.…”

Section: Fig 11mentioning

confidence: 99%

“…The technological processes vary depending on the type of a substrate for the transistor circuitry. Two kinds of substrates have been used: conventional silicon wafers [24,25,29], and flexible elastomer substrates (the socalled rubber stamps) [46]. a. Source/drain/gate structures on Si substrates In this method, the source/drain/gate structure is fabri-FIG.…”

Section: Electrostatic Bonding Techniquementioning

confidence: 99%

Organic Single‐Crystal Field‐Effect Transistors

Boer¹,

Gershenson²,

Morpurgo³

et al. 2005

Physics of Organic Semiconductors

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We present an overview of recent studies of the charge transport in the field effect transistors on the surface of single crystals of organic low-molecular-weight materials. We first discuss in detail the technological progress that has made these investigations possible. Particular attention is devoted to the growth and characterization of single crystals of organic materials and to different techniques that have been developed for device fabrication. We then concentrate on the measurements of the electrical characteristics. In most cases, these characteristics are highly reproducible and demonstrate the quality of the single crystal transistors. Particularly noticeable are the small sub-threshold slope, the non-monotonic temperature dependence of the mobility, and its weak dependence on the gate voltage. In the best rubrene transistors, room-temperature values of µ as high as 15 cm 2 /Vs have been observed. This represents an order-of-magnitude increase with respect to the highest mobility previously reported for organic thin film transistors. In addition, the highest-quality single-crystal devices exhibit a significant anisotropy of the conduction properties with respect to the crystallographic direction. These observations indicate that the field effect transistors fabricated on single crystals are suitable for the study of the intrinsic electronic properties of organic molecular semiconductors. We conclude by indicating some directions in which near-future work should focus to progress further in this rapidly evolving area of research.

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Nanoscale organic transistors that use source/drain electrodes supported by high resolution rubber stamps

Cited by 132 publications

References 10 publications

Large-scale organic nanowire lithography and electronics

Large-scale organic nanowire lithography and electronics

Ambient Electronics

Organic Single‐Crystal Field‐Effect Transistors

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