Nanoscale-order Homogeneous Structure of SiO2 Film on Poly-silicon Grown at Room Temperature using UV Light Excited Ozone.

Abstract

We have grown SiO 2 films on polycrystalline Si using excited ozone produced by ultra-violet light irradiation to ozone. An over-5 nm thick SiO 2 film was grown in 30 min even at room temperature. The TEM image indicates that the spatial distribution of the SiO 2 film thickness is 6.0 0.1 nm over an area of 100 nm square at the surface of poly-Si, where the grain sizes of poly-Si are less than 10 nm. This result suggests that the oxidation rate of silicon by excited ozone is independent of Si crystal orientation. The SiO 2 film by the excited ozone is expected to be utilized for the buffer layer with good interface properties.