Nanoscale Ni/Mo/MoO3/Ni memristor for synaptic applications
Maryala Praveen,
Atul Kumar Nishad,
Vipul Kumar Nishad
Abstract:For the first time, a physics‐based modelling of a nanoscale Ni/Mo/MoO3/Ni memristor is presented in this letter by inserting a ‘Mo:Capping layer’ between the top electrode (Ni) and the insulating layer (MoO3). The proposed memristor has stable hysteresis I–V characteristics as well as a significant reduction in ‘Forming voltage’ (VFORM) to 0.75 V. The simulated resistive switching responses using the COMSOL Multiphysics package demonstrate consistently low values of coefficient of variability (CV) with 14.31%… Show more
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