We report on the phosphonic acid route for the grafting of functional molecules, optical switch (dithienylethene diphosphonic acid, DDA), on La 0.7 Sr 0.3 MnO 3 (LSMO). Compact self-assembled monolayers (SAMs) of DDA are formed on LSMO as studied by topographic atomic force microscopy (AFM), ellipsometry, water contact angle and X-ray photoemission spectroscopy (XPS). The conducting AFM measurements show that the electrical conductance of LSMO/ DDA is about 3 decades below that of the bare LSMO substrate. Moreover, the presence of the DDA SAM suppresses the known conductance switching of the LSMO substrate that is induced by mechanical and/or bias constraints during C-AFM measurements. A partial light-induced conductance switching between the open and closed forms of the DDA is observed for the LSMO/DDA/C-AFM tip molecular junctions (closed/open conductance ratio of about 8). We show that, in the case of long-time exposition to UV light, this feature can be masked by a non-reversible decrease (a factor of about 15) of the conductance of the LSMO electrode. Paris-Saclay, ANR-11-IDEX-0003-02. We thank C. van Dyck (U. of Alberta, Canada), V. Diez Cabanes and J. Cornil (LCNM, U. Mons, Belgium) for theoretical discussions on the electronic properties of diarylethene derivatives. We thank S. Godey and D. Deresmes (IEMN-CNRS) for advises and collaborations with the UHV C-AFM experiments, and J.L. Caudron (IEMN-CNRS) for XPS measurements.