Nanoscale imaging and control of resistance switching in VO2 at room temperature

Kim, Jeehoon; Ko, Changhyun; Frenzel, Alex; Ramanathan, Shriram; Hoffman, Jennifer

doi:10.1063/1.3435466

Cited by 127 publications

(100 citation statements)

References 20 publications

(15 reference statements)

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“…37,57,58 Depending on the film quality, the conductivity increases by 3 -4 orders of magnitude when heating the samples above the MIT temperature. Adopting a resistivity of 1 cm for VO 2 at room temperature and 1 m cm at …”

Section: Resultsmentioning

confidence: 99%

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Tuning the conductivity of vanadium dioxide films on silicon by swift heavy ion irradiation

et al. 2011

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We demonstrate the generation of a persistent conductivity increase in vanadium dioxide thin films grown on single crystal silicon by irradiation with 1 GeV 238U swift heavy ions at room temperature. VO2 undergoes a temperature driven metal-insulator-transition (MIT) at 67 °C. After room temperature ion irradiation with high electronic energy loss of 50 keV/nm the conductivity of the films below the transition temperature is strongly increased proportional to the ion fluence of 5·109 U/cm2 and 1·1010 U/cm2. At high temperatures the conductivity decreases slightly. The ion irradiation slightly reduces the MIT temperature. This observed conductivity change is persistent and remains after heating the samples above the transition temperature and subsequent cooling. Low temperature measurements down to 15 K show no further MIT below room temperature. Although the conductivity increase after irradiation at such low fluences is due to single ion track effects, atomic force microscopy (AFM) measurements do not show surface hillocks, which are characteristic for ion tracks in other materials. Conductive AFM gives no evidence for conducting ion tracks but rather suggests the existence of conducting regions around poorly conducting ion tracks, possible due to stress generation. Another explanation of the persistent conductivity change could be the ion-induced modification of a high resistivity interface layer formed during film growth between the vanadium dioxide film and the n-Silicon substrate. The swift heavy ions may generate conducting filaments through this layer, thus increasing the effective contact area. Swift heavy ion irradiation can thus be used to tune the conductivity of VO2 films on silicon substrates

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Section: Resultsmentioning

confidence: 99%

“…[27][28][29][30][31][32][33][34][35][36][37][38][39] An interesting MIT system as candidate to generate conducting ion tracks or generally to produce ion-induced conductivity changes is VO 2 . VO 2 exhibits a reversible temperature driven MIT, which markedly changes its electronic and optical properties.…”

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confidence: 99%

Tuning the conductivity of vanadium dioxide films on silicon by swift heavy ion irradiation

et al. 2011

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“…25,26 These filaments were interpreted as electrical instabilities related to the peculiar S-shaped I-V characteristics measured in VO 2 , in particular to their region of negative differential resistance (NDR). [27][28][29][30] Only a comprehensive microscopic theory of RS in correlated insulators, compatible with all the experimental evidence at hand, can resolve this long-standing puzzle. The recently proposed classical resistor network models 1,2,20,31-34 successfully reproduced part of the phenomenology but these are heuristic approaches, not firmly grounded from a microscopic perspective.…”

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confidence: 99%

Microscopic Theory of Resistive Switching in Ordered Insulators: Electronic versus Thermal Mechanisms

Aron

Kotliar

et al. 2017

Nano Lett.

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We investigate the dramatic switch of resistance in ordered correlated insulators, when driven out of equilibrium by a strong voltage bias. Microscopic calculations on a driven-dissipative lattice of interacting electrons explain the main experimental features of resistive switching (RS), such as the hysteretic I-V curves and the formation of hot conductive filaments. The energy-resolved electron distribution at the RS reveals the underlying nonequilibrium electronic mechanism, namely Landau-Zener tunneling, and also justifies a thermal description where the hot-electron temperature, estimated from the first moment of the distribution, matches the equilibrium phase transition temperature. We discuss the tangled relationship between filament growth and negative 1 arXiv:1608.01931v2 [cond-mat.str-el]

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“…Vanadium dioxide (VO 2 ) is well known as a typical material invoking an electronic phase transition between a high-temperature metallic state and a low-temperature insulating state accompanied by orders of magnitude changes in resistance at 340 K. 7,8 In the vicinity of the metal-insulator transition (MIT) temperature, VO 2 has mixed electronic phases consisting of metal and insulator domains, 3,9 obscuring the intrinsic properties of the phase transition. By reducing the sample size to a single domain, on the other hand, a steep first-order phase transition for individual domains can be observed.…”

Section: Introductionmentioning

confidence: 99%

“…[10][11][12] Regarding the characteristics of the phase transition, ultra-fast 13 and spatial avalanche transitions in domains 10,14,15 have been reported. Thus, electronic control of the transition in the two terminal devices has much attracted attention; 9,[16][17][18][19] however, the control enables only a one-way transition, from insulator to metal (I-to-M). Inherently, the transition using an electric bias is caused by Joule heating, 19,20 which is unlikely to present reversible controllability of the transition.…”

Section: Introductionmentioning

confidence: 99%

Local Peltier-effect-induced reversible metal–insulator transition in VO2 nanowires

2016

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We report anomalous resistance leaps and drops in VO2 nanowires with operating current density and direction, showing reversible and nonvolatile switching. This event is associated with the metal–insulator phase transition (MIT) of local nanodomains with coexistence states of metallic and insulating phases induced by thermoelectric cooling and heating effects. Because the interface of metal and insulator domains has much different Peltier coefficient, it is possible that a significant Peltier effect would be a source of the local MIT. This operation can be realized by one-dimensional domain configuration in VO2 nanowires because one straight current path through the electronic domain-interface enables theoretical control of thermoelectric effects. This result will open a new method of reversible control of electronic states in correlated electron materials.

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Nanoscale imaging and control of resistance switching in VO2 at room temperature

Abstract: Published Version

Cited by 127 publications

References 20 publications

Tuning the conductivity of vanadium dioxide films on silicon by swift heavy ion irradiation

Tuning the conductivity of vanadium dioxide films on silicon by swift heavy ion irradiation

Microscopic Theory of Resistive Switching in Ordered Insulators: Electronic versus Thermal Mechanisms

Local Peltier-effect-induced reversible metal–insulator transition in VO2 nanowires

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