Nanoscale p-n junction fabrication in silicon due to controlled dopant electromigration

Abstract

An external electric field (up to 106 V/cm) was used for nanoscale p-n junction fabrication in Si doped with Li (Si:Li) in situ in a scanning probe microscope. Creation of nano-p-n junctions was ascribed to the thermally assisted electromigration of Li+ ions. Tunneling I–V spectroscopy provided evidence for a conversion of the electrical conductivity type from p to n. A local temperature increase during an electric field-induced p-n junction fabrication was estimated to be up to 160 °C.