Nanoscale floating-gate characteristics of colloidal Au nanoparticles electrostatically assembled on Si nanowires

Abstract

Nanoscale floating-gate characteristics of colloidal Au nanoparticles electrostatically assembled on Si nanowires have been investigated. Colloidal Au nanoparticles with ∼5nm diameters were selectively deposited onto the lithographically defined n-type Si nanowire surface by 2min electrophoresis between the channel and the side gates. The device transfer characteristics measured at room temperature showed hysteresis, with the depletion mode cutoff voltage applied by the side gates shifted by as much as 1.5V, with the source-drain bias at 1.4V. The results demonstrate that the electrostatic assembly of colloidal Au nanoparticles is a useful method for the fabrication of Si nanowire based nanoscale floating-gate nonvolatile memory structures.

High‐Performance UV–Vis–NIR Phototransistors Based on Single‐Crystalline Organic Semiconductor–Gold Hybrid Nanomaterials

“…Currently, there is an increasing demand for alternative approaches to enhance the performances of optoelectronic devices due to the intrinsic limitations (e.g., low molar absorptivity or long response time) of single‐component semiconductors as photoactive material . To overcome this limitation, novel hybrid systems have been introduced as alternatives through various fabrication methods, including electrospinning, meniscus‐guided method, electrostatic assembly, spin‐coating, and stirring, because they can supplement material weaknesses by combining two components into one system . Furthermore, hybrid platforms can generate new functionality or offer synergistic interactions by making the best use of the different electrical/optical properties of each component .…”

Flexible Nonvolatile Transistor Memory Devices Based on One‐Dimensional Electrospun P3HT:Au Hybrid Nanofibers

“…Nanoelectronics based on 1D nanomaterials (such as nanotube, nanowire or nanofiber) are considered to be promising candidates for the scaling‐limiting problem in the semiconducting manufacturing technology 17–19. Previous reports mainly based on 1D inorganic nanowires‐based device1s decorated with metal NPs,20–23 charge transfer molecules24, 25 or ferroelectric gate dielectric26, 27 were interacted as charge storage of floating gate transistor memories. Recently, our groups demonstrated larger threshold voltages shift of self‐assembled n‐type organic N,N'‐bis(2‐phenylethyl)‐perylene‐3,4:9,10‐tetracarboxylic diimide (BPE‐PTCDI) semiconducting nanowires for nonvolatile transistor memory applications due to its higher electrical field generated in the confined dimension 27.…”

Preferential Outward Diffusion of Cu during Unconventional Galvanic Replacement Reactions between HAuCl4 and Surface-Limited Cu Nanocrystals

“…In contrast to the well-studied metal diffusion in bulk, − on thin films, , and on the surface of substrates, − the diffusion behavior (kinetic, diffusion coefficient, etc .) of noble metals in nanostructured materials remains elusive, despite the impending need when the metal NCs are integrated − or assembled into building blocks − for future devices. One of the major obstacles is the lack of reliable protocols for such diffusion measurements in nanoscale materials.…”